Growth and fabrication of semi-polar InGaN/GaN multi-quantum well light-emitting diodes on microstructured Si(001) substrates  

作　　者：陈龙 裴嘉鼎 史达特 李成 张建明 俞文杰 狄增峰 王曦 

机构地区：[1]State Key Laboratory of Functional Materials for Informatics, Institute of Microsystem and Information Technology,Chinese Academy of Sciences [2]Shanghai Sim?ra Incorporated

出　　处：《Chinese Physics B》2015年第11期530-533,共4页中国物理B（英文版）

摘　　要：Semi-polar （1 - 101 ） InGaN/GaN light-emitting diodes were prepared on standard electronic-grade Si （100） substrates. Micro-stripes of GaN and InGaN/GaN quantum wells on semi-polar facets were grown on intersecting { 111 } planes of microscale V-grooved Si in metal-organic vapor phase epitaxy, covering over 50% of the wafer surface area. In-situ optical reflectivity and curvature measurements demonstrate that the effect of the thermal expansion coefficient mismatch was greatly reduced. A cross-sectional analysis reveals low threading dislocation density on the top of most surfaces. On such prepared （1-101） GaN, an InGaN/GaN LED was fabricated. Electroluminescence over 5 mA to 60 mA is found with a much lower blue-shift than that on the c-plane device. Such structures therefore could allow higher efficiency light emitters with a weak quantum confined Stark effect throughout the visible spectrum.Semi-polar （1 - 101 ） InGaN/GaN light-emitting diodes were prepared on standard electronic-grade Si （100） substrates. Micro-stripes of GaN and InGaN/GaN quantum wells on semi-polar facets were grown on intersecting { 111 } planes of microscale V-grooved Si in metal-organic vapor phase epitaxy, covering over 50% of the wafer surface area. In-situ optical reflectivity and curvature measurements demonstrate that the effect of the thermal expansion coefficient mismatch was greatly reduced. A cross-sectional analysis reveals low threading dislocation density on the top of most surfaces. On such prepared （1-101） GaN, an InGaN/GaN LED was fabricated. Electroluminescence over 5 mA to 60 mA is found with a much lower blue-shift than that on the c-plane device. Such structures therefore could allow higher efficiency light emitters with a weak quantum confined Stark effect throughout the visible spectrum.

关 键 词：metalorganic chemical vapor deposition SEMIPOLAR light emitting diodes 

分 类 号：TN312.8[电子电信—物理电子学]