SEMIPOLAR

作品数:11被引量:28H指数:2
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相关领域:电子电信理学更多>>
相关作者:孙钱更多>>
相关机构:中国科学院更多>>
相关期刊:《Chinese Physics Letters》《Chinese Physics B》《Opto-Electronic Advances》《Photonics Research》更多>>
相关基金:国家自然科学基金中国博士后科学基金国家高技术研究发展计划更多>>
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Self-polarized RGB device realized by semipolar micro-LEDs and perovskite-in-polymer films for backlight applications被引量:2
《Opto-Electronic Advances》2024年第3期35-49,共15页Tingwei Lu Yue Lin Tianqi Zhang Yue Huang Xiaotong Fan Shouqiang Lai Yijun Lu Hao-Chung Kuo Zhong Chen Tingzhu Wu Rong Zhang 
the National Natural Science Foundation of China(62274138);Natural Science Foundation of Fujian Province of China(2023J06012);Science and Technology Plan Project in Fujian Province of China(2021H0011);Fundamental Research Funds for the Central Universities(20720230029);Compound semiconductor technology Collaborative Innovation Platform project of FuXiaQuan National Independent Innovation Demonstration Zone(3502ZCQXT2022005).
In backlighting systems for liquid crystal displays,conventional red,green,and blue(RGB)light sources that lack polarization properties can result in a significant optical loss of up to 50%when passing through a polar...
关键词:halide perovskite LIGHT-EMITTING-DIODES polarized emission nanocrystals stability 
Multi-step in situ interface modification method for emission enhancement in semipolar deep-ultraviolet light emitting diodes
《Photonics Research》2022年第12期2778-2785,共8页LI CHEN JIE SUN WEI GUO JASON HOO WEI LIN HANGYANG CHEN HOUQIANG XU LONG YAN SHIPING GUO JUNYONG KANG JICHUN YE 
National Natural Science Foundation of China(61874091,61974149,62104233);Key Research and Development Program of Zhejiang Province(2020C01145);Natural Science Foundation of Zhejiang Province(LQ21F40004,LR22F40004);Youth Innovation Promotion Association of the Chinese Academy of Sciences(2020298)。
SemipolarⅢ-nitrides have attracted increasing attention in applications of optoelectronic devices due to the much reduced polarization field.A high-quality semipolar AlN template is the building block of semipolar Al...
关键词:DIODES polarization INTERFACE 
Highly stable full-color display device with VLC application potential using semipolarμLEDs and all-inorganic encapsulated perovskite nanocrystal被引量:6
《Photonics Research》2021年第11期2132-2143,共12页TINGZHU WU YUE LIN YU-MING HUANG MENG LIU KONTHOUJAM JAMES SINGH WANSHENG LIN TINGWEI LU XI ZHENG JIANYANG ZHOU HAO-CHUNG KUO ZHONG CHEN 
National Natural Science Foundation of China(11904302,61504112);Major Project of the Science and Technology in Fujian Province of China(2019HZ020013);Industry University Cooperation Project of Science and Technology Department in Fujian Province of China(2018H6022);Major Science and Technology Projects in Xiamen of China(3502Z20191015);Fundamental Research Funds for the Central Universities(20720190005)。
A promising approach for the development of effective full-color displays is to combine blue micro LEDs(μLEDs)with color conversion layers.Perovskite nanocrystals(PNCs)are notable for their tolerance to defects and p...
关键词:VLC quantum polar 
Full-color micro-LED display with high color stability using semipolar(20-21) InGaN LEDs and quantum-dot photoresist被引量:23
《Photonics Research》2020年第5期630-636,共7页SUNG-WEN HUANG CHEN YU-MING HUANG KONTHOUJAM JAMES SINGH YU-CHIEN HSU FANG-JYUN LIOU JIE SONG JOOWON CHOI PO-TSUNG LEE CHIEN-CHUNG LIN ZHONG CHEN JUNG HAN TINGZHU WU HAO-CHUNG KUO 
Ministry of Science and Technology,Taiwan,China(107-2221-E-009-113-MY3,108-2221-E-009-113-MY3);National Natural Science Foundation of China(11904302);Hsinchu Science Park Bureau,Ministry of Science and Technology,Taiwan,China(108A08B);Major Science and Technology Project of Xiamen,China(3502Z20191015)。
Red-green-blue(RGB)full-color micro light-emitting diodes(μ-LEDs)fabricated from semipolar(20-21)wafers,with a quantum-dot photoresist color-conversion layer,were demonstrated.The semipolar(20-21)In Ga N/Ga Nμ-LEDs ...
关键词:LEDS PHOTORESIST sapphire 
Band offset and electronic properties at semipolar plane Al N(1ī01)/diamond heterointerface
《Chinese Physics B》2018年第5期518-525,共8页Kong-Ping Wu Wen-Fei Ma Chang-Xu Sun Chang-Zhao Chen  Liu-Yi Ling Zhong-Gen Wang 
Project supported by the Scholarship Council of China(Grant No.201508340047);the Postdoctoral Science Foundation of China(Grant No.2016M601993);the Postdoctoral Science Foundation of Anhui Province,China(Grant No.2017B215);the Anhui Province University Outstanding Talent Cultivation Program,China(Grant No.gxfx ZD2016077)
Tailoring the electronic states of the Al N/diamond interface is critical to the development of the next-generation semiconductor devices such as the deep-ultraviolet light-emitting diode, photodetector, and high-powe...
关键词:DIAMOND HETEROINTERFACE charge transfer band offset 
Semipolar(1122) and polar(0001) InGaN grown on sapphire substrate by using pulsed metal organic chemical vapor deposition
《Chinese Physics B》2017年第2期467-472,共6页Sheng-Rui Xu Ying Zhao Ren-Yuan Jiang Teng Jiang Ze-Yang Ren Jin-Cheng Zhang Yue Hao 
Project supported by the National Natural Science Foundation of China(Grant Nos.61204006 and 61574108);the Fundamental Research Funds for the Central Universities,China(Grant No.7214570101)
High indium semipolar(1122) and polar(0001) In Ga N layers each with a thickness of about 100 nm are realized simultaneously on sapphire substrates by pulsed metal organic chemical vapor deposition(MOCVD). The m...
关键词:semipolar GaN MOCVD 
Improved Semipolar(11(2|-)2) GaN Quality Grown on m-Plane Sapphire Substrates by Metal Organic Chemical Vapor Deposition Using Self-Organized SiN_x Interlayer
《Chinese Physics Letters》2016年第6期150-152,共3页许晟瑞 赵颖 姜腾 张进成 李培咸 郝跃 
Supported by the National Natural Science Foundation of China under Grant Nos 61204006 and 61574108;the Fundamental Research Funds for the Central Universities under Grant No JB141101;the Foundation of Key Laboratory of Nanodevices and Applications of Suzhou Institute of Nano-Tech and Nano-Bionics of Chinese Academy of Sciences under Grant No 15CS01
The effect of a self-organized SiNs interlayer on the defect density of (1122) semipolar GaN grown on 7n-plane sapphire is studied by transmission electron microscopy, atomic force microscopy and high resolution x-r...
关键词:GaN Quality Grown on m-Plane Sapphire Substrates by Metal Organic Chemical Vapor Deposition Using Self-Organized SiN_x Interlaye in of is by Improved Semipolar on 
Growth and fabrication of semi-polar InGaN/GaN multi-quantum well light-emitting diodes on microstructured Si(001) substrates
《Chinese Physics B》2015年第11期530-533,共4页陈龙 裴嘉鼎 史达特 李成 张建明 俞文杰 狄增峰 王曦 
Semi-polar (1 - 101 ) InGaN/GaN light-emitting diodes were prepared on standard electronic-grade Si (100) substrates. Micro-stripes of GaN and InGaN/GaN quantum wells on semi-polar facets were grown on intersectin...
关键词:metalorganic chemical vapor deposition SEMIPOLAR light emitting diodes 
Effect of pressure on the semipolar GaN(10-11) growth mode on patterned Si substrates
《Chinese Physics B》2015年第5期572-576,共5页刘建明 张洁 林文禹 叶孟欣 冯向旭 张东炎 Steve Ding 徐宸科 刘宝林 
support by the National High Technology Research and Development Program of China(Green Laser)
In this paper, we investigate the effect of pressure on the growth mode of high quality (10-11) GaN using an epi- taxial lateral over growth (ELO) technique by metal organic chemical vapor deposition (MOCVD). Tw...
关键词:SEMIPOLAR PRESSURE metal-organic chemical vapor deposition 
Luminescence of a GaN grain with a nonpolar and semipolar plane in relation to microstructural characterization
《Chinese Physics B》2012年第6期520-524,共5页周小伟 许晟瑞 张进成 党纪源 吕玲 郝跃 郭立新 
Project supported by the Fundamental Research Funds for the Central Universities,China (Grant No. K50511250002);the National Key Science and Technology Special Project,China (Grant No. 2008ZX01002-002);the National Natural Science Foundation of China (Grant Nos. 60736033,60976068,and 61076097)
We report on the growth of the high-quality GaN grain on a r-plane sapphire substrate by using a self-organized SiN interlayer as a selective growth mask. Transmission electron microscopy, scanning electron microscopy...
关键词:NONPOLAR SEMIPOLAR GAN yellow luminescence 
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