the National Natural Science Foundation of China(62274138);Natural Science Foundation of Fujian Province of China(2023J06012);Science and Technology Plan Project in Fujian Province of China(2021H0011);Fundamental Research Funds for the Central Universities(20720230029);Compound semiconductor technology Collaborative Innovation Platform project of FuXiaQuan National Independent Innovation Demonstration Zone(3502ZCQXT2022005).
In backlighting systems for liquid crystal displays,conventional red,green,and blue(RGB)light sources that lack polarization properties can result in a significant optical loss of up to 50%when passing through a polar...
National Natural Science Foundation of China(61874091,61974149,62104233);Key Research and Development Program of Zhejiang Province(2020C01145);Natural Science Foundation of Zhejiang Province(LQ21F40004,LR22F40004);Youth Innovation Promotion Association of the Chinese Academy of Sciences(2020298)。
SemipolarⅢ-nitrides have attracted increasing attention in applications of optoelectronic devices due to the much reduced polarization field.A high-quality semipolar AlN template is the building block of semipolar Al...
National Natural Science Foundation of China(11904302,61504112);Major Project of the Science and Technology in Fujian Province of China(2019HZ020013);Industry University Cooperation Project of Science and Technology Department in Fujian Province of China(2018H6022);Major Science and Technology Projects in Xiamen of China(3502Z20191015);Fundamental Research Funds for the Central Universities(20720190005)。
A promising approach for the development of effective full-color displays is to combine blue micro LEDs(μLEDs)with color conversion layers.Perovskite nanocrystals(PNCs)are notable for their tolerance to defects and p...
Ministry of Science and Technology,Taiwan,China(107-2221-E-009-113-MY3,108-2221-E-009-113-MY3);National Natural Science Foundation of China(11904302);Hsinchu Science Park Bureau,Ministry of Science and Technology,Taiwan,China(108A08B);Major Science and Technology Project of Xiamen,China(3502Z20191015)。
Red-green-blue(RGB)full-color micro light-emitting diodes(μ-LEDs)fabricated from semipolar(20-21)wafers,with a quantum-dot photoresist color-conversion layer,were demonstrated.The semipolar(20-21)In Ga N/Ga Nμ-LEDs ...
Project supported by the Scholarship Council of China(Grant No.201508340047);the Postdoctoral Science Foundation of China(Grant No.2016M601993);the Postdoctoral Science Foundation of Anhui Province,China(Grant No.2017B215);the Anhui Province University Outstanding Talent Cultivation Program,China(Grant No.gxfx ZD2016077)
Tailoring the electronic states of the Al N/diamond interface is critical to the development of the next-generation semiconductor devices such as the deep-ultraviolet light-emitting diode, photodetector, and high-powe...
Project supported by the National Natural Science Foundation of China(Grant Nos.61204006 and 61574108);the Fundamental Research Funds for the Central Universities,China(Grant No.7214570101)
High indium semipolar(1122) and polar(0001) In Ga N layers each with a thickness of about 100 nm are realized simultaneously on sapphire substrates by pulsed metal organic chemical vapor deposition(MOCVD). The m...
Supported by the National Natural Science Foundation of China under Grant Nos 61204006 and 61574108;the Fundamental Research Funds for the Central Universities under Grant No JB141101;the Foundation of Key Laboratory of Nanodevices and Applications of Suzhou Institute of Nano-Tech and Nano-Bionics of Chinese Academy of Sciences under Grant No 15CS01
The effect of a self-organized SiNs interlayer on the defect density of (1122) semipolar GaN grown on 7n-plane sapphire is studied by transmission electron microscopy, atomic force microscopy and high resolution x-r...
Semi-polar (1 - 101 ) InGaN/GaN light-emitting diodes were prepared on standard electronic-grade Si (100) substrates. Micro-stripes of GaN and InGaN/GaN quantum wells on semi-polar facets were grown on intersectin...
support by the National High Technology Research and Development Program of China(Green Laser)
In this paper, we investigate the effect of pressure on the growth mode of high quality (10-11) GaN using an epi- taxial lateral over growth (ELO) technique by metal organic chemical vapor deposition (MOCVD). Tw...
Project supported by the Fundamental Research Funds for the Central Universities,China (Grant No. K50511250002);the National Key Science and Technology Special Project,China (Grant No. 2008ZX01002-002);the National Natural Science Foundation of China (Grant Nos. 60736033,60976068,and 61076097)
We report on the growth of the high-quality GaN grain on a r-plane sapphire substrate by using a self-organized SiN interlayer as a selective growth mask. Transmission electron microscopy, scanning electron microscopy...