Full-color micro-LED display with high color stability using semipolar(20-21) InGaN LEDs and quantum-dot photoresist  

作　　者：SUNG-WEN HUANG CHEN YU-MING HUANG KONTHOUJAM JAMES SINGH YU-CHIEN HSU FANG-JYUN LIOU JIE SONG JOOWON CHOI PO-TSUNG LEE CHIEN-CHUNG LIN ZHONG CHEN JUNG HAN TINGZHU WU HAO-CHUNG KUO 

机构地区：[1]Department of Photonics&Graduate Institute of Electro-Optical Engineering,College of Electrical and Computer Engineering,Taiwan Chiao Tung University,Hsinchu 30010,China [2]Institute of Photonic System,Taiwan Chiao Tung University,Tainan 71150,China [3]Saphlux Inc.,Branford,Connecticut 06405,USA [4]Departm ent of Electronic Science,Fujian Engineering Research Center for Solid-State Lighting,Xiamen University,Xiamen 361005,China [5]Departm ent of Electrical Engineering,Yale University,New Haven,Connecticut 06520,USA

出　　处：《Photonics Research》2020年第5期630-636,共7页光子学研究（英文版）

基　　金：Ministry of Science and Technology,Taiwan,China(107-2221-E-009-113-MY3,108-2221-E-009-113-MY3);National Natural Science Foundation of China(11904302);Hsinchu Science Park Bureau,Ministry of Science and Technology,Taiwan,China(108A08B);Major Science and Technology Project of Xiamen,China(3502Z20191015)。

摘　　要：Red-green-blue(RGB)full-color micro light-emitting diodes(μ-LEDs)fabricated from semipolar(20-21)wafers,with a quantum-dot photoresist color-conversion layer,were demonstrated.The semipolar(20-21)In Ga N/Ga Nμ-LEDs were fabricated on large(4 in.)patterned sapphire substrates by orientation-controlled epitaxy.The semipolarμ-LEDs showed a 3.2 nm peak wavelength shift and a 14.7%efficiency droop under 200 A∕cm2injected current density,indicating significant amelioration of the quantum-confined Stark effect.Because of the semipolarμ-LEDs’emission-wavelength stability,the RGB pixel showed little color shift with current density and achieved a wide color gamut(114.4%NTSC space and 85.4%Rec.2020).

关 键 词：LEDS PHOTORESIST sapphire 

分 类 号：TN312.8[电子电信—物理电子学]