Luminescence of a GaN grain with a nonpolar and semipolar plane in relation to microstructural characterization  

作　　者：周小伟 许晟瑞 张进成 党纪源 吕玲 郝跃 郭立新 

机构地区：[1]Key Laboratory of Wide Band-Gap Semiconductor Technology,School of Microelectronics,Xidian University [2]School of Science,Xidian University [3]Flight Automatic Control Research Institute,AVIC

出　　处：《Chinese Physics B》2012年第6期520-524,共5页中国物理B（英文版）

基　　金：Project supported by the Fundamental Research Funds for the Central Universities,China (Grant No. K50511250002);the National Key Science and Technology Special Project,China (Grant No. 2008ZX01002-002);the National Natural Science Foundation of China (Grant Nos. 60736033,60976068,and 61076097)

摘　　要：We report on the growth of the high-quality GaN grain on a r-plane sapphire substrate by using a self-organized SiN interlayer as a selective growth mask. Transmission electron microscopy, scanning electron microscopy, and Raman spectroscopy are used to reveal the effect of SiN on the overgrown a-plane GaN growth. The SiN layer effectively terminates the propagation of the threading dislocation and basal plane stacking faults during a-plane GaN regrowth through the interlayer, resulting in the window region shrinking from a rectangle to a ＂black hole＂. Furthermore, strong yellow luminescence （YL） in the nonpolar plane and very weak YL in the semipolar plane on the GaN grain is revealed by cathodoluminescence, suggesting that C-involved defects are responsible for the YL.We report on the growth of the high-quality GaN grain on a r-plane sapphire substrate by using a self-organized SiN interlayer as a selective growth mask. Transmission electron microscopy, scanning electron microscopy, and Raman spectroscopy are used to reveal the effect of SiN on the overgrown a-plane GaN growth. The SiN layer effectively terminates the propagation of the threading dislocation and basal plane stacking faults during a-plane GaN regrowth through the interlayer, resulting in the window region shrinking from a rectangle to a ＂black hole＂. Furthermore, strong yellow luminescence （YL） in the nonpolar plane and very weak YL in the semipolar plane on the GaN grain is revealed by cathodoluminescence, suggesting that C-involved defects are responsible for the YL.

关 键 词：NONPOLAR SEMIPOLAR GAN yellow luminescence 

分 类 号：O471[理学—半导体物理]