碳化硅直接键合及其界面微观结构分析  

SiC and SiC Direct Bonding and Microstructure Analysis of the Bonding Interface

作　　者：王心心[1,2] 梁庭[1,2] 贾平岗[1,2] 王涛龙 刘雨涛[1,2] 张瑞[1,2] 熊继军[1,2] 

机构地区：[1]中北大学仪器科学与动态测试教育部重点实验室,太原030051 [2]中北大学电子测试技术国防科技重点实验室,太原030051

出　　处：《微纳电子技术》2015年第11期729-732,746,共5页Micronanoelectronic Technology

基　　金：国家杰出青年科学基金资助项目(51425505);国家自然科学基金资助项目(51405454)

摘　　要：针对碳化硅(SiC)材料在微电子制造和封装过程中广泛的应用前景,对碳化硅与碳化硅进行了直接键合实验。通过拉伸实验进行了样品键合强度的测试以及借助扫描电子显微镜(SEM)和能谱仪(EDS)等对碳化硅键合样品界面的微观结构进行了分析。结果表明:亲水性表面处理和高温退火是形成界面过渡层的主要因素,并且界面过渡层的形成增强了碳化硅牢固的键合效果。For the broad application prospect of silicon carbide（SiC）in microelectronics manufacturing and packaging process,the direct bonding experiment between SiC and SiC was carried out.The bonding strength of the sample was tested by the tensile experiment,and the microstructure of the SiC bonding sample interface was analyzed by the scanning electron microscopy（SEM）and energy dispersive spectrometer（EDS）,respectively.The results indicate that a transition layer is formed at the bonding interface of SiC and SiC.The hydrophilic surface treatment and annealing at the high temperature are the main reasons of the formation of the transition layer,and its formation strengthens the strong bonding effect of SiC.

关 键 词：碳化硅键合 键合强度 微观结构 亲水性表面处理 退火 过渡层 

分 类 号：TN35[电子电信—物理电子学]