SiC单晶生长界面形状计算机模型的建立及验证  

Numerical Modeling and Experimental Verification of Computer Model for SiC Crystal Shape of Growth Interface

作　　者：窦瑛[1] 程红娟[1] 孟大磊[1] 

机构地区：[1]中国电子科技集团公司第四十六研究所,天津300220

出　　处：《半导体技术》2015年第11期850-855,共6页Semiconductor Technology

摘　　要：利用多物理场耦合模拟软件研究了3英寸(1英寸=2.54 cm)碳化硅(Si C)单晶生长中感应线圈位置对单晶生长系统温度场的影响。分析了感应线圈位置变化对晶体表面径向温度、晶体内部轴向温度以及晶体生长界面形状的影响。同时分析了不同生长时期晶体的界面形状和各向温差的变化规律,建立了3英寸Si C单晶生长界面形状计算机模型,进而将计算机模拟得到的晶体界面形状与单晶生长对照实验获得晶体的界面形状相对比,验证了该模型的可靠性。以此为依据,优化了单晶生长工艺参数,获得了理想的适合3英寸Si C单晶生长的温度场,并成功获得了高质量的3英寸Si C单晶。The effects of the induction coil position on the thermal field distribution of growth system were investigated using multi-physics field coupling simulation software in 3 inch（ 1 inch = 2. 54 cm） silicon carbide（ Si C） crystal growth. The effects of the induction coil position changes on the radial temperature of the crystal surface,the axis temperature of the crystal inside and the growth shapes of the crystal were analyzed. At the same time,the changes of growth shapes and temperature distribution during the crystal growth process were discussed. The computer model of the 3 inch Si C crystal shape of growth interface was established. The reliability of the model was verified by comparing with the results of crystal growth experiments. In term of numerical simulation results,the growth parameters of Si C crystal are modified and an ideal thermal field for the growth of 3 inch Si C crystal is acquired. Finally,the high quality 3 inch Si C crystal is obtained.

关 键 词：数值模拟 SIC单晶 温度场 线圈位置 生长界面形状 

分 类 号：TN304.24[电子电信—物理电子学]