低温锗量子点缓冲层技术生长硅锗弛豫衬底研究  

Growth of Si Ge virtual substrate on Si(100) by low temperature Ge islands buffer

作　　者：周志文[1] 叶剑锋[1] 李世国[1] 

机构地区：[1]深圳信息职业技术学院电子与通信学院,广东深圳518172

出　　处：《深圳信息职业技术学院学报》2015年第3期5-10,共6页Journal of Shenzhen Institute of Information Technology

基　　金：深圳市科技计划项目(No.JCYJ20120821162230170);广东省高等学校优秀青年教师项目(Yq2014123)

摘　　要：为了提高生长在硅衬底上的硅锗弛豫衬底的质量,提出了低温锗量子点缓冲层技术,分析了该技术在应变弛豫的促进,表面形貌的改善,位错密度的降低等方面的作用机理。基于低温锗量子点缓冲层技术,利用超高真空化学气相淀积系统,在硅衬底上生长出高质量的硅锗弛豫衬底。锗组份为0.28,厚度不足380 nm的硅锗弛豫衬底,应变弛豫度达到99%,表面没有Cross-hatch形貌,表面粗糙度小于2 nm,位错密度低于105 cm-2。A method for the growth of strain-relaxed Si Ge virtual substrate（VS） on Si substrate with low temperature Ge（LT-Ge） islands buffer was proposed and studied. The role of LT-Ge islands buffer played in the mechanism of strain adjustment, surface modification and dislocation annihilation was analyzed. High-quality strain-relaxed Si Ge VS was grown on Si（100） substrate in an ultra-high vacuum chemical vapor deposition system by LT-Ge islands buffer. Si0.72Ge0.28 VS with a thickness of only 380 nm had a strain relaxation degree of 99%. No cross-hatch pattern was observed on the Si Ge VS surface and the surface root-mean-square roughness was less than 2 nm. The threading dislocation density was lower than 105 cm-2.

关 键 词：硅锗弛豫衬底 低温锗量子点缓冲层 生长 

分 类 号：TM23[一般工业技术—材料科学与工程]