功率晶体管建模现状及特性研究  

A Review of Power Transistor Modeling:Current Situations and Future Trends

作　　者：吴淘锁[1,2] 邬海峰[1] 

机构地区：[1]天津大学电子信息工程学院,天津300072 [2]呼伦贝尔学院物理与电子信息学院,内蒙古海拉尔021008

出　　处：《无线互联科技》2015年第17期116-117,139,共3页Wireless Internet Technology

摘　　要：功率晶体管建模是PA设计的基础,其精度直接决定了PA设计的成败问题。研究功率晶体管建模的发展现状,将有助于把握该技术的变革特点和未来发展趋势,具有极其重要的意义。通过文献调研,文章总结了功率晶体管模型的发展现状及其中一些有待解决的问题,为未来的研究指明了方向。Power transistors modeling is the basic of the power amplifier design, and the accuracy of the device model directly determine the final performance of the PA. To grasp the evolution characteristics and the future trends, it is extremely meaningful to investigate and analyze the current development situation of the power transistors models. Based on the literature reviews, this paper summarizes the development situations of the power transistors models and the problems to be solved, which provides the guidance for the future.

关 键 词：功率晶体管 建模 

分 类 号：TN323.4[电子电信—物理电子学]