一种带有温度补偿电路的射频功率放大器  

RF Power Amplifier with Temperature Compensation Circuit

作　　者：黄亮[1] 章国豪 张志浩[1] 李思臻[1] 

机构地区：[1]广东工业大学信息工程学院,广州510006

出　　处：《电子科技大学学报》2015年第6期814-817,共4页Journal of University of Electronic Science and Technology of China

基　　金：广东省领军人才专项资助项目(400130002)

摘　　要：针对无线通信应用的射频功率放大器,提出了一种新颖的温度补偿电路。应用该温度补偿电路,设计了一款基于In Ga P/Ga As HBT工艺的两级F类功率放大器。该功率放大器采用了带温度补偿特性的有源偏置电路,能有效地提高线性度,补偿温度引起的性能偏差;输出匹配网络采用F类功率放大器谐波理论而设计。在1 920~1 980 MHz频段和电源电压3.4 V条件下,测得常温状态该功率放大器增益为27 d B;输出功率在28 d Bm时功率附加效率达到42%,邻信道功率比为?36 d Bc;在?20℃~80℃之间功率附加效率和邻信道功率比基本不变。A novel temperature compensation circuit for an RF power amplifier of wireless communication applications is presented. A two stage class F power amplifier with this tempera^re compensation circuit based on InGaP/GaAs HBT technology is also designed. The active bias network with the temperature compensation circuit can effectively improve the linearity and thermal characteristics, which allowing the power amplifier with little degradation in performance under temperature variation. The output matching network is designed to realize a class F power amplifier. The fabricated power amplifier shows 42% power added efficiency （PAE） with -36 dBc adjacent channel power ratio （ACPR） at 28 dBm output power, and 27 dB gain, respectively, measured with WCDMA signals at a supply voltage of 3.4 V in a frequency range from 1 920 MHz to 1 980 MHz. The power added efficiency （PAE） and ACPR are well compensated over the temperature from -20 ℃ to 80 ℃.

关 键 词：有源偏置 F类 谐波抑制 功率放大器 温度补偿 

分 类 号：TN958[电子电信—信号与信息处理]