基于锗量子点的硅基发光器件  

Si-based light-emitting devices based on Ge quantum dots

作　　者：夏金松[1] 蒋最敏[2] 曾成[1] 张永[1] 

机构地区：[1]华中科技大学,武汉430074 [2]复旦大学,上海200433

出　　处：《光通信研究》2015年第6期1-5,29,共6页Study on Optical Communications

基　　金：国家"八六三"计划资助项目(2015AA016904);国家"九七三"计划资助项目(2013CB632104;2013CB933303);国家自然科学基金资助项目(61335002;61177049);教育部新世纪优秀人才支持计划(NCET-12-0218)

摘　　要：硅基光源是实现硅基集成光电子芯片的核心器件,虽然近年来国内外已经取得多项重要成果,但适合于下一代大规模光电集成芯片的小尺寸、低功耗、工艺兼容的高效硅基发光器件仍然缺乏。文章介绍了基于嵌入光学微腔中的锗量子点实现硅基发光器件方面的研究成果,通过将分子束外延生长的锗自组装量子点嵌入硅光子晶体微腔中,实现了室温下处于通信波段的共振发光。通过在图形化衬底上生长实现锗量子点的定位,并精确嵌入光子晶体微腔中,实现了基于锗单量子点的硅基发光器件。Si light source is the core device for making Si-based integrated optoelectronic chips.In recent years,multiple major results have been achieved in this respect at home and abroad,but there is still lack of small-size,low power consuming,process compatible and highly efficient Si-based emitters appropriate for the next generation large-scale optoelectronic integrated chips.In this paper,our research results in making Si-based light emitting devices in Ge quantum dots embedded in Si photonic crystal microcavities are introduced.Among others,we realized resonant light emission in the communication waveband at room-temperature by embedding the Ge self-assembled quantum dots grown by the molecular beam epitaxy method in the Si photonic crystal microcavities and the positioning of Ge quantum dots by their growth on the patterned sapphire substrate,and the Si-based light emitters based single Ge quantum dot by precisely embedding them in the photonic crystal microcavities.

关 键 词：硅基发光器件 锗量子点 光学微腔 

分 类 号：TN256[电子电信—物理电子学]