Investigation of trap states in Al_2O_3 InAlN/GaN metal–oxide–semiconductor high-electron-mobility transistors  

作　　者：张鹏 赵胜雷 薛军帅 祝杰杰 马晓华 张进成 郝跃 

机构地区：[1]Key Laboratory of Wide Band-Gap Semiconductor Materials and Devices, School of Advanced Materials and Nanotechnology,Xidian University [2]Key Laboratory of Wide Band-Gap Semiconductor Materials and Devices, School of Microelectronics, Xidian University

出　　处：《Chinese Physics B》2015年第12期503-506,共4页中国物理B（英文版）

基　　金：Project supported by the Program for National Natural Science Foundation of China(Grant Nos.61404100 and 61306017)

摘　　要：In this paper the trapping effects in Al2O3/In0.17Al0.83N/GaN MOS-HEMT（here, HEMT stands for high electron mobility transistor） are investigated by frequency-dependent capacitance and conductance analysis. The trap states are found at both the Al2O3/In AlN and InAlN/GaN interface. Trap states in InAlN/GaN heterostructure are determined to have mixed de-trapping mechanisms, emission, and tunneling. Part of the electrons captured in the trap states are likely to tunnel into the two-dimensional electron gas（2DEG） channel under serious band bending and stronger electric field peak caused by high Al content in the In AlN barrier, which explains the opposite voltage dependence of time constant and relation between the time constant and energy of the trap states.In this paper the trapping effects in Al2O3/In0.17Al0.83N/GaN MOS-HEMT（here, HEMT stands for high electron mobility transistor） are investigated by frequency-dependent capacitance and conductance analysis. The trap states are found at both the Al2O3/In AlN and InAlN/GaN interface. Trap states in InAlN/GaN heterostructure are determined to have mixed de-trapping mechanisms, emission, and tunneling. Part of the electrons captured in the trap states are likely to tunnel into the two-dimensional electron gas（2DEG） channel under serious band bending and stronger electric field peak caused by high Al content in the In AlN barrier, which explains the opposite voltage dependence of time constant and relation between the time constant and energy of the trap states.

关 键 词：INALN TRAPPING frequency-dependent conductance metal–oxide–semiconductor high-electronmobility transistors 

分 类 号：TN386[电子电信—物理电子学]