HWCVD工艺参数对a-Si∶H薄膜结构及其对单晶硅片钝化效果的影响研究  

The structure and passivation effect for the c-Si wafer of a-Si∶H films with different processing parameters by HWCVD

作　　者：何玉平[1,2] 黄海宾[1] 周浪[1] 宁武涛 袁吉仁[1] 李丹[3] 

机构地区：[1]南昌大学光伏研究院,南昌 330031 [2]南昌工程学院理学院,南昌 330099 [3]贵州师范大学物理与电子科学学院,贵阳 550001

出　　处：《功能材料》2015年第22期22067-22070,22073,共5页Journal of Functional Materials

基　　金：国家自然科学基金资助项目(61306084;61464007);教育部博士点基金资助项目(20113601120006);江西省教育厅青年基金资助项目(GJJ13010);贵州省科学技术基金资助项目[黔科合J字LKS(2013)15号]

摘　　要：采用HWCVD法双面沉积a-Si∶H膜钝化n-Cz-Si片表面,利用光谱型椭偏测试仪和傅里叶红外光谱仪研究沉积气压、电流和热丝衬底间距对a-Si∶H薄膜结构及钝化性能的影响。结果表明,(1)薄膜中SiH2键相对SiH键含量随气压升高逐渐减少,随电流增大先减少后增大;(2)热丝衬底间距4.0cm相比7.5cm沉积的a-Si∶H薄膜微观结构中,SiH2键相比SiH键的比例更高,钝化效果也更好;(3)本文范围内,工艺参数分别为热丝衬底间距4.0cm时气压1.5Pa,沉积电流21.5A情况下钝化效果最优,钝化后硅片的表面复合速率为2.9cm/s。Bifacial-deposited a-Si∶ H films were made on n-Cz-Si with different processing parameters by HWCVD,the structure and the passivation effect of a-Si∶H films were analyzed by spectroscopic ellipsometry(SE)and Fourier Transform Infrared Spectroscopy(FT-IR)with different depositing pressure,current,and distance between filament and substrate.The results show that:(1)Relative content of SiH2 to SiH bond in films decreases with the pressure increasing,but decreases firstly then increases with current increasing;(2)Compare to 7.5cm of distance between filament and substrate,the samples of 4.0cm,proportion of the SiH2 bond compare to SiH bond is higher,passivation effect is better;(3)Within the scope of this study,the passivation effect is optimal with pressure 1.5Pa,current 21.5A,distance 7.5cm,surface recombination velocity2.9cm/s.

关 键 词：HWCVD a-Si∶H 钝化 ε_(2) FT-IR SiH_(n) 微观结构参数R^(*) 

分 类 号：O484[理学—固体物理]