Ga、Al共掺杂及单掺杂ZnO基透明导电薄膜的研究  

PROPERTIES OF Ga,Al CO-DOPED AND SINGLE-DOPED ZnO BASED THIN FILMS

作　　者：马洪芳[1,2] 马芳[1] 张长存[1] 马龙[1] 王小蕊[1] 

机构地区：[1]山东建筑大学材料科学与工程学院,济南250101 [2]教育部省部共建可再生能源建筑利用技术重点实验室,济南250101

出　　处：《太阳能学报》2015年第11期2685-2689,共5页Acta Energiae Solaris Sinica

基　　金：国家自然科学基金(51275279);山东省科技发展计划(2010G0020318);山东省自然科学基金(ZR2010EM062);山东省教育厅科技计划(J12LA12);济南市高校自主创新计划(201401233)

摘　　要：采用溶胶-凝胶旋涂法制备出Ga、Al共掺杂和单掺杂Zn O基透明导电薄膜[Zn O∶(Ga,Al)(GAZO),Zn O∶Al(AZO)和Zn O∶Ga(GZO)],利用XRD、SEM、AFM、四探针电阻率测试仪和可见分光光度计测试技术,分析薄膜的结构、表面形貌和光电性能等。结果表明:薄膜表面光滑,呈六方纤锌矿结构,且沿C轴择优取向;与单掺杂薄膜相比,Ga、Al共掺杂可促进晶体生长,细化晶粒,并在一定范围内提高薄膜的透光率。与纯Zn O薄膜相比,共掺杂和单掺杂薄膜的电阻率均明显降低。Ga and Al co-doped and single-doped ZnO thin films [ZnO： （Ga, Al）（GAZO）, ZnO：Al （AZO）and ZnO：Ga （GZO） ] were successfully synthesized by the sol-gel method using spin coating technique. The detection methods, such as XRD, SEM, AFM, four probe resistivity tests and visible spectrophotometer, were employed to analyze the structure, surface morphology and photoelectric properties of the films. It was found that the films with smooth surface are polycrystalline with a hexagonal structure and a preferred orientation along the C-axis. Compared with the single-doped thin film, the co-doping of Ga and Al has many advantages, such as promoting the growth of the crystal lattice, refining the grain, and improving transmittance in a certain range. Moreover, the resistivity of co-doped and single-doped ZnO films has been greatly reduced.

关 键 词：溶胶-凝胶法 薄膜 共掺杂 微观结构 光电性能 

分 类 号：TB34[一般工业技术—材料科学与工程]