不同偏置条件下光电耦合器的总剂量效应  

Total Dose Effect on Optocoupler under Different Bias Conditions

作　　者：黄绍艳[1] 刘敏波[1] 盛江坤 姚志斌[1] 王祖军[1] 何宝平[1] 肖志刚[1] 唐本奇[1] 

机构地区：[1]西北核技术研究所强脉冲辐射环境模拟与效应国家重点实验室,西安710024

出　　处：《半导体光电》2015年第5期708-712,共5页Semiconductor Optoelectronics

摘　　要：开展了4N49光电耦合器不同辐照偏置条件下的辐照实验,结果表明:电流传输比的下降幅度与辐照期间的偏置条件有关,处于工作状态的光电耦合器比短路状态的总剂量效应要弱,其根源是光电耦合器的LED施加了电流,而与光敏晶体管的偏置状态关系不大;电流传输比随偏置条件的变化关系是由初级光电流决定的,而C-B区光响应度是初级光电流退化的主导因素。60 Co irradiation on 4N49 optocouplers was developed under different bias conditions.The experimental results show that the degradation of current transfer ratio at a given total dose depends on bias condition during irradiation,and the degradation is lower under the condition of working than short-circuit.The main reason comes from the current biased on LED and has little relation with phototransistor＇s bias condition.The dependence of CTR on bias condition stems from primary photocurrent,and primary photocurrent degradation may be mainly attributed to the photoresponse degradation in C-B region of phototransistor.

关 键 词：光电耦合器 总剂量效应 不同偏置 电流传输比 

分 类 号：TN364[电子电信—物理电子学]