Wafer-scale arrayed p-n junctions based on few-layer epitaxial GaTe  

作　　者：Xiang Yuan Lei Tang Peng Wang Zhigang Chen Yichao Zou Xiaofeng Su Cheng Zhang Yanwen Liu Weiyi Wang Cong Liu Fansheng Chen Jin Zou Peng Zhou Weida Hu Faxian Xiu 

机构地区：[1]StateKeyLaboratoryofSurfacePhysicsandDepartmentofPhysics,andCollaborativeInnovationCenterofAdvancedMicrostructures,FudanUniversity,Shanghai200433,China [2]NationalLaboratoryforInflaredPhysics,ShanghaiInstituteofTechnicalPhysics,ChineseAcademyofSciences,Shanghai200083,China [3]MaterialsEngineering,TheUniversityofQueensland,BrisbaneQLD4072,Australia [4]SatelliteRemoteSensingLaboratory,ShanghaiInstituteofTechnicalPhysics,ChineseAcademyofSciences,Shanghai200083,China [5]CentreforMicroscopyandMicroanalysis,TheUniversityofQueensland,BrisbaneQLD4072,Australia [6]StateKeyLaboratoryofASICandSystem,DepartmentofMicroelectronics,FudanUniversity,Shanghai200433,China

出　　处：《Nano Research》2015年第10期3332-3341,共10页纳米研究（英文版）

基　　金：This work was supported by the National Young 1000 Talent Plan, Pujiang Talent Plan in Shanghai, National Natural Science Foundation of China （Nos. 61322407, 11474058, and 11322441）, the Chinese Na- tional Science Fund for Talent Training in Basic Science （No. J1103204）, and Ten Thousand Talents Program for young talents. Part of the sample fabrication was performed at Fudan Nano-fabrication Laboratory. We acknowledge Yuanbo Zhang, Yizheng Wu, Zuimin Jiang, Likai Li, Boliang Chen for great assistance during the device fabrication and measurements.

摘　　要：Two-dimensional （2D） materials have attracted substantial attention in electronic and optoelectronic applications with the superior advantages of being flexible, transparent, and highly tunable. Gapless graphene exhibits ultra-broadband and fast photoresponse while the 2D semiconducting MoS2 and GaTe exhibit high sensitivity and tunable responsivity to visible light. However, the device yield and repeatability call for further improvement to achieve large-scale uniformity. Here, we report a layer-by-layer growth of wafer-scale GaTe with a high hole mobility of 28.4 cm^2/（V.s） by molecular beam epitaxy. The arrayed p-n ）unctions were developed by growing few-layer GaTe directly on fhree-inch Si wafers. The resultant diodes reveal good rectifying characteristics and a high photovoltaic external quantum efficiency up to 62% at 4.8 μW under zero bias. The photocurrent reaches saturation fast enough to capture a time constant of 22 μs and shows no sign of device degradation after 1.37 million cycles of operation. Most strikingly, such high performance has been achieved across the entire wafer, making the volume production of devices accessible. Finally, several photoimages were acquired by the GaTe/Si photodiodes with reasonable contrast and spatial resolution, demonstrating the potential of integrating the 2D materials with silicon technology for novel optoelectronic devices.二维(2D ) 材料吸引了实质的注意在电子并且有灵活、透明、高度悦耳的优异优点的 optoelectronic 应用。当时，无差距的 graphene 展出极端宽带、快的 photoresponse 半导体的瞬间 ₂ 和门高展出的 2D 敏感和悦耳的 responsivity 到可见的光。然而，设备收益和重覆性打电话让进一步的改进完成大规模一致性。这里，我们与 28.4 厘米 ²/(V0 的高洞活动性报导晶片规模门的 layer-by-layer

关 键 词：GATE wafer-scaletwo-dimensional materials p-n junction imaging PHOTODIODE PHOTOSENSOR 

分 类 号：TN215[电子电信—物理电子学] O475[理学—半导体物理]