ZnO压敏电阻的并联结构对通流能力的影响  

Effects of ZnO Varistors Parallel Formation on the Flow Capacity

作　　者：徐松[1] 庞驰[1] 黄文森[1] 李历阳 费自豪 

机构地区：[1]贵州大学材料与冶金学院,贵阳550003 [2]贵阳高新益舸电子有限公司,贵阳550022

出　　处：《电瓷避雷器》2015年第6期84-87,共4页Insulators and Surge Arresters

基　　金：贵州省高等学校大学生创新创业训练计划:贵大创字2014(005)

摘　　要：为了提高电涌保护器中压敏电阻的耐电流冲击性能,生产上均采取压敏电阻的并联组合。在测试过程中发现,论文中的两种并联结构其8/20μs通流容量相差约20%。对并联组合后的压敏电阻劣化原因进行了分析,认为非对称并联结构的电流不均匀,其中一只压敏电阻承受的电流过大,导致性能迅速劣化、失效。通过加大电极片、连接片的宽度,降低阻抗,减小电流值的偏差,同时采用不同通流容量的压敏电阻进行配对并联,从而提高非对称并联结构的通流容量。For improving the current impact-resistant pertormance ot varistor, parauei connection has been applied in manufacture. It has been found during testing process that the two pairs of parallel connected ZnO varistors referred in this paper are with about 20% difference in 8/20 μs flow capacity. By analyzing the deterioration reason of parallel connected varistors, it has been suggested that the current is uneven through the asymmetric parallel formation. One of the varistors bears overrange current and causes the properties deterioration and rapidly fails of experimental samples. By increasing the size of electrodes and width of the connection pieces, reducing impedance and current deviation of the varistors, matching the parallel varistors with different flow capacity, the asymmetric flow capacity of the varistors in parallel formation can be improved.

关 键 词：ZNO压敏电阻 并联结构 8/20 μs通流能力 

分 类 号：TM54[电气工程—电器]