一种改进的增强型GaNHEMT大信号模型  

An Improved Large-Signal Model of E-Mode GaN HEMT

作　　者：陈秋芬[1] 李文钧[1] 刘军[1] 陆海燕[2] 韩春林[2] 

机构地区：[1]杭州电子科技大学教育部射频电路与系统重点实验室,杭州310037 [2]南京电子器件研究所微波毫米波单片集成和模块电路国家级重点实验室,南京210016

出　　处：《半导体技术》2015年第12期904-910,共7页Semiconductor Technology

摘　　要：提出一种改进的增强型GaN HEMT器件建模大信号模型。模型沟道电流方程和电荷方程均连续且高阶可导,栅电荷模型满足电荷守恒原则。提出的沟道电流模型可精确拟合实际器件正、反向区、截止区以及亚阈值区的直流特性。根据GaN HEMT器件特有的物理结构和电学特性,器件的自热效应、电流崩塌效应以及跨导频率分布效应在模型中进行了考虑。模型采用Verilog-A语言进行描述,并编译、链接入Agilent ADS工具。验证结果表明,模型仿真和测试数据在宽的偏压和频率范围内得到很好地吻合。An improved large-signal model for the enhancement mode（ E-mode） Ga N HEMTs modeling was presented. Both the equations for channel current and gate charge models were all continuous and high order drivable,and the proposed gate charge model satisfied the charge conservation. The channel current model could fit DC performance of devices,such as the positive,negative,cut-off and sub-threshold region. According to the specific physical structure and electrical properties of Ga N HEMT devices,the self-heating,current collapse and the trans-conductance dispersion effects were considered in the model development. The model was compiled and linked into Agilent ADS tools for simulation by using Verilog-A language. The model prediction shows excellent agreement between the data from both simulation and measurement over a wide bias conditions and frequency range.

关 键 词：增强型GaN HEMT 大信号模型 沟道电流模型 栅电荷模型 Verilog-A语言 

分 类 号：TN386[电子电信—物理电子学]