HDP介质淀积引起的新天线效应及损伤机理  

Damage Mechanism of the New Antenna Effect during HDP Oxide Deposition Process

作　　者：黄红伟 杭弢[2] 李明[2] 

机构地区：[1]上海华虹宏力半导体制造有限公司,上海201203 [2]上海交通大学材料科学与工程学院,上海200240

出　　处：《半导体技术》2015年第12期921-924,共4页Semiconductor Technology

摘　　要：超大规模集成电路设计和制造过程中,基于栅氧化层击穿的天线效应已得到广泛研究。从一个数模转换电路的漏电失效案例分析着手,利用电性分析、物理失效分析、工艺排查结合电路设计分析等手段,研究了一种与栅氧化层无关的天线效应。结果发现这种新的天线效应发生在高密度等离子体淀积介质层的工艺过程中,相邻金属互连长导线因不同的接地方式而具有不同的电势差,造成金属互连导线间的击穿和漏电。同时给出了该种天线效应的解决方案,该结果为半导体工艺设计规则制定提供了新的参考。Antenna effect caused by gate oxide breakdown was already widely studied in very large scale integration design and fabrication. Based on the analysis on the leakage failure of the analog-todigi-tal converter circuit,the antenna effect irrelevant to gate oxide breakdown was studied by the analysis of electrical,physical failure and process history combined with design rule checking. It was found that this new antenna effect occurred in the process of high density plasma deposition. The inter-metal dielectric oxide breakdown or leakage was caused by different grounding configuration of adjacent long metal lines which induced different electrical potential. The solution to this antenna effect was also provided as the reference for the circuit design rule.

关 键 词：天线效应 高密度等离子体(HDP) 失效分析 模拟集成电路 设计规则 

分 类 号：TN405[电子电信—微电子学与固体电子学]