HfO_2基阻变存储器的电极效应（英文）  

Effects of Electrodes on the Filament Formation in HfO_2-Based Resistive Random Access Memory

作　　者：谭婷婷[1] 郭婷婷[1] 李小晶[1] 陈曦[1] 冯丽萍[1] 刘正堂[1] 

机构地区：[1]西北工业大学凝固技术国家重点实验室,陕西西安710072

出　　处：《稀有金属材料与工程》2015年第11期2642-2645,共4页Rare Metal Materials and Engineering

基　　金：National Natural Science Foundation of China(51202196);Northwestern Polytechnical University(NPU)Foundation for Fundamental Research(JC201111);Research Fund of the State Key Laboratory of Solidification Processing(NWPU)(58-TZ-2011);"111"Project(B08040)

摘　　要：研究了Cu/HfO_2/ITO和TiN/HfO_2/ITO_2种结构阻变存储器件的电阻转变特性。2种结构均表现出稳定的、可重复的双极电阻转变行为。Cu/HfO_2/ITO器件的电阻转变机制是Cu导电细丝的形成,而对于TiN/HfO_2/ITO器件,在TiN顶电极和HfO_2薄膜中会形成界面层,因此氧空位导电细丝的形成与断裂,是其主要的电阻转变机制。The resistance switching characteristics of HfO2-based resistive random access memory（RRAM） with Cu/HfO2/ITO and TiN/HfO2/ITO structures were investigated.Results show that both devices exhibit a stable and reproducible bipolar switching behavior during successive cycles.The formation of Cu conducting filaments is believed to be the reason for the resistive switching of Cu/HfO2/ITO device.For TiN top electrode,the interfacial layer between TiN and HfO2 film is formed and acts as an oxygen reservoir therefore,oxygen vacancy filaments are responsible for the resistive switching of TiN/HfO2/ITO device.

关 键 词：HFO2薄膜 电阻转变机制 金属细丝 氧空位 

分 类 号：TP333[自动化与计算机技术—计算机系统结构]