磷硅镉的差热分析与晶体生长（英文）  

Differential Thermal Analysis and Crystal Growth of CdSiP_2

作　　者：杨辉[1] 朱世富[1] 赵北君[1] 何知宇[1] 陈宝军[1] 吴圣灵 吴敬尧[1] 孙宁[1] 

机构地区：[1]四川大学,四川成都610064

出　　处：《稀有金属材料与工程》2015年第11期2665-2669,共5页Rare Metal Materials and Engineering

基　　金：National Natural Science Foundation of China(51172149)

摘　　要：利用毛细管中的差热分析研究了磷硅镉晶体的热力学性质,得到了磷硅镉的熔点和凝固点分别为1139和1126℃,过冷度为13℃。根据差热分析结果,对晶体生长炉以及温场分布进行了优化,采用改进的布里奇曼法生长得到了直径15 mm,长40 mm的无开裂磷硅镉晶体。利用X射线衍射,能谱以及红外分光光度计对晶体进行了表征。发现了(112)解理面,能谱测试表明晶体符合化学计量配比,在7000~1500 cm^(-1)红外透光范围内红外透过率达到55%。所有表征手段显示得到的晶体结构完整,光学性能良好,可用于器件的制作。Thermal properties of CdSiP2 polycrystalline were studied by differential thermal analysis（DTA） technique with a quartz capillary column.It is found that the melting point and crystallization temperature of CdSiP2 are 1139 and 1126 ℃,respectively,and the supercooling degree of CdSiP2 melt is evaluated to be 13 ℃.According to the results of DTA,the structure of a furnace and the temperature profile of the crystal growth for CdSiP2 were optimized.A crack-free CdSiP2 crystal with 15 mm in diameter and 40 mm in length was grown by the modified vertical Bridgman（VB） method.The X-ray diffractionmeter（XRD）,X-ray energy dispersive microanalysis（EDX） and infrared spectrophotometer（IR） were employed to characterize the properties of as-grown crystal.A new cleavage face of（112） was identified in XRD spectrum.The results of EDX indicate that the crystal is of good stoichiometry.The infrared transmission is up to 55%in the infrared region from 7000 to 1500 cm-1.All the characterization results show that the obtained crystal is integrated in structure and good in optical quality which can be used in devices fabrication.

关 键 词：磷硅镉 晶体生长 表征 差热分析 

分 类 号：O78[理学—晶体学]