低温沉积ITO薄膜划擦行为、微结构、电学和光学性能的研究（英文）  

Scratch Behavior, Microstructure, Resistivity and Optical Properties of Indium Tin Oxide Film Grown at Low Deposition Temperature

作　　者：唐武[1] 王雅琴[1] 刘结[1] 张兰[2] 

机构地区：[1]电子科技大学电子薄膜和集成器件国家重点实验室,四川成都610054 [2]西安交通大学金属材料强度国家重点实验室,陕西西安710049

出　　处：《稀有金属材料与工程》2015年第11期2683-2687,共5页Rare Metal Materials and Engineering

基　　金：National Natural Science Foundation of China(51071038);Sichuan Province Science Foundation for Youths(2010JQ0002);State Key Laboratory for Mechanical Behavior of Materials;Xi’an Jiaotong University(20131309)

摘　　要：通过RF磁控溅射技术制备不同溅射气压下的ITO薄膜,对其电阻率、光学透过率、XRD图、AFM图和划擦行为进行了研究。薄膜和基板的附着力通过划擦测试进行表征,重点研究了薄膜划擦测试的不同阶段的特征。研究表明随着Ar溅射气压的下降,薄膜附着力下降。而且,ITO薄膜的表面形貌和电阻率强烈的依赖于Ar气压。低温沉积ITO薄膜均为非晶态,在溅射气压0.8 Pa时得到电阻率(1.25×10^(-3)Ω·cm)和高可见光透过率薄膜(90%)。研究结果表明该薄膜光学禁带约为3.85 eV,电阻率主要受载流子浓度控制,受溅射气压的变化影响有限。Indium tin oxide（ITO） films prepared by RF magnetron sputtering were characterized by Hall measurement,optical transmission spectra,X-ray diffraction（XRD）,atomic force microscopy（AFM） and scratch testing.Deposition was performed at low temperature in different Ar sputtering pressures.The adhesion between the film and the substrate was estimated quantitatively by a scratch testing,in which a special attention was paid to the different stages.It can be found that the significant adhesion improvement is obtained in the ITO films deposited on the polymethyl methacrylate（PMMA） substrate with decreasing of the Ar sputtering pressure.The surface morphology and the resistivity of the ITO films are also significantly dependent on the Ar sputtering pressure.The low temperature films consist of an amorphous phase,the resistivity（1.25×10-3 Ω·cm） and high transmittance（90%） in a visible range can be obtained in the Ar pressure 0.8 Pa.The typical resistivities are mainly governed by the carrier concentration in the ITO films at biggish Ar sputtering pressure,and the optical band gap is about 3.85 eV for all the ITO films.

关 键 词：ITO 划擦测试 电阻率 

分 类 号：TQ133.53[化学工程—无机化工] TB383.2[一般工业技术—材料科学与工程]