微波CVD方法在Ar-CO_2-CH_4体系中沉积超纳米金刚石薄膜（英文）  

Ultrananocrystalline Diamond Films Deposited in Ar-CO_2-CH_4 Gas Mixtures by Microwave CVD

作　　者：丰杰 祁尧[1] 盛景恺 李周[1] 马莉[1] 吴先哲[1] 胡东平[2] 梅军[2] 余志明[1] 魏秋平[1] 

机构地区：[1]中南大学,湖南长沙410083 [2]中国工程物理研究院总体工程研究所,四川绵阳621900 [3]南京三乐电子信息产业集团有限公司,江苏南京210032

出　　处：《稀有金属材料与工程》2015年第12期3009-3013,共5页Rare Metal Materials and Engineering

基　　金：National Natural Science Foundation of China(51301211,21271188);the Foundation of Laboratory of Ultra Precision Manufacturing Technology of CAEP(ZZ13005);Research Foundation of CAEP(2010A0302013);the China Postdoctoral Science Foundation(2012M521541);the State Key Laboratory of Powder Metallurgy(20110933K);the Open-End Fund for Valuable and Precision Instruments of Central South University(CSU2013016)

摘　　要：采用微波CVD系统研究了Ar-CO_2-CH_4气氛中不同工艺条件对超纳米金刚石薄膜形貌的影响。结果表明:以Ar-CO_2-CH_4为反应气源,可制备出晶粒尺寸为20 nm左右、表面粗糙度在16 nm以下,厚度达5μm以上,结构致密的超纳米金刚石薄膜;在Ar-CH_4组分中添加CO_2可明显提高金刚石膜的沉积速率,但采用该气源组分能够得到致密金刚石膜的气源组成范围很窄。其原因和控制方式有待深入研究。Ultrananocrystalline diamond film was deposited by microwave chemical vapor deposition （CVD） system using Ar- CO2-CH4 as gas source. The effects of process conditions on the morphology of diamond film were investigated. Results show that the compact ultrananocrystalline films with thickness of 5 μm, crystal size of 20 nm and surface roughness below 16 nm can be deposited. The deposition rate is significantly improved by adding CO2 into the Ar-CH4 system. However, the parameter window of gas source for the deposition of compact nanodiamond films is quite narrow when this gas source is employed. Further research is needed to investigate the reasons and optimal process condition.

关 键 词：超纳米金刚石 微波化学气相沉积 Raman分析 原子力显微镜 沉积速率 

分 类 号：TB383.2[一般工业技术—材料科学与工程]