InN_(0.01)Sb_(0.99)薄膜的红外反射光谱及探测特性和退火的影响  

Far-infrared reflectance spectra and photoelectric characteristics of InN_(0.01)Sb_(0.99) thin films and the annealing effects

作　　者：黄亮[1] 景友亮[1] 刘希辉 李倩[1] 陈平平[1] 李志锋[1] 

机构地区：[1]中国科学院上海技术物理研究所红外物理国家重点实验室,上海200083

出　　处：《红外与毫米波学报》2015年第4期437-441,共5页Journal of Infrared and Millimeter Waves

基　　金：国家重点基础研究发展计划(2011CB922004);国家自然科学基金(61376053;61405231)~~

摘　　要：对基于GaAs失配衬底的新型红外探测材料InN_(0.01)Sb_(0.99)薄膜的远红外反射光谱,以及制备成光电导器件后的黑体响应和光电流谱进行了测试,获得了80 K温度下,响应峰值约为4.4μm、半高宽约为3.5μm、截止波长约为5.7μm的中波宽带响应红外探测原型器件.研究了退火对In N_(0.01)Sb_(0.99)薄膜光电导器件性能的影响,发现退火能够改善晶体质量,提高器件的响应能力,并减小Moss-Burstein效应的影响.The far-infrared reflectance spectra and the infrared detection characteristics of the newinfrared material of InN_0.01Sb_0.99 thin films were reported. Far-infrared reflectance spectra,blackbody photoresponses and photocurrent spectra of the lattice mismatched InN_0.01Sb_0.99 film on Ga As substrate have been measured. A prototype wide-band infrared detector whose response peak at 4.4 μm and cut-off wavelength at 5.7 μm with the FWHM of 3.5 μm has been obtained. By investigating the annealing effects on the device performance,it is found that the crystal quality and the response capability are improved and the M oss-Burstein effect is reduced after annealing.

关 键 词：InNSb薄膜 红外反射光谱 红外探测器 退火 

分 类 号：O472[理学—半导体物理]