单晶Si、单结GaAs太阳能电池的激光损伤特性对比研究  

Research of laser irradiation effect on monocrystalline silicon solar cells and single junction GaAs solar cells

作　　者：朱荣臻[1] 王睿[1] 江天[1] 许中杰[1] 程湘爱[1,2] 

机构地区：[1]国防科学技术大学光电科学与工程学院,湖南长沙410073 [2]国防科学技术大学高性能计算国家重点实验室,湖南长沙410073

出　　处：《红外与毫米波学报》2015年第4期479-485,共7页Journal of Infrared and Millimeter Waves

摘　　要：采用1064 nm纳秒脉冲激光辐照单晶Si、单结G As太阳能电池,针对不同强度激光辐照太阳能电池的损伤特性进行了实验研究,得出激光光斑聚焦在电池栅线上时,电池更易损伤,单晶Si电池的栅线打断之后仍能很好工作,单结GaAs电池却完全失效,这是由于高掺杂的基底锗熔融凝固连接栅线,导通电池正负极.实验结果还表明,激光辐照在电池表面时,对单晶Si电池基本没有影响,而GaAs电池输出性能也没有很大幅度的下降.理论分析了纳秒激光对电池的损伤主要是热、力效应共同作用的结果.热效应使材料熔化、气化,力效应主要沿着激光传输的方向,垂直于材料表面.常温下Si材料对1 064 nm有较强的本征吸收,GaAs电池的GaAs层透过1 064 nm,Ge基底本征吸收1 064 nm,Ge材料的熔点低于Si材料且其禁带宽度更窄,故其初始损伤阈值略低.通过SEM扫描电镜、激光拉曼材料分析及X射线光电子能谱仪等分析手段对实验结果进行了验证.Monocrystalline silicon and single junction Ga As / Ge solar cells irradiated by 16 ns pulse-duration with the laser at 1064 nm wavelength for different fluences（ energy densities） were studied. It was found that solar cell is easily damaged when laser spot was focused on the metal gridlines,meanwhile,monocrystalline silicon solar cell was almost undamaged when laser spot was focused on the surface,Ga As / Ge solar cells＇ performance didn＇t decrease greatly.Theoretically,the damage of nanosecond pulse mainly commons heat and dynamics effects. The high temperature melts and gasifies materials and the dynamical effect is along the laser＇s transmitting direction vertical to the surface of materials. Investigation also indicates that monocrystalline Si cells and the thick germanium base intrinsically absorb 1064 nm strongly,while the Ga As / Ge is transparent to 1064 nm,The melting point of germanium material is lower than that of silicon,so its damage threshold is lower. These experimental conclusions were proved and verified by scanning electron microscopy（ SEM） and X-ray photoelectron spectroscopy（ XPS）.

关 键 词：太阳能电池 激光损伤 单晶Si 单结GaAs COMSOL 扫描电镜 X射线光电子能谱仪 

分 类 号：TB43[一般工业技术]