晶片与光刻胶温度差对波导损耗的影响  

Influence of temperature difference between wafer and photoresist on loss of waveguide

作　　者：闫广拓 张爱玲[1,2,3] 何培栋 孙钦芳 

机构地区：[1]天津理工大学计算机与通信工程学院,天津300384 [2]天津市薄膜电子与通信器件重点实验室,天津300384 [3]教育部通信器件与技术工程研究中心,天津300384

出　　处：《光通信技术》2015年第12期8-11,共4页Optical Communication Technology

基　　金：国家自然科学基金(61377075)资助

摘　　要：研究了铌酸锂晶片与光刻胶之间的温度差对钛扩散铌酸锂波导传输损耗的影响。分别在高温度差和低温度差下制备了钛扩散铌酸锂波导,并对其进行了测量。对比实验结果表明,温度差相对较低时,可以得到较大的波导模场尺寸和较小的波导传输损耗。仿真结果显示,波导模场尺寸较大时,波导的传输损耗较小,与实验结果一致。In the paper, the effect of temperature difference between wafer and photoresist on the transmission loss of Titanium diffusion Lithium Niobate （LN） waveguide is studied. Titanium diffusion LN waveguides under high and low temperature difference are fabricated and measured. The experimental results show that larger mode field size and smaller transmission loss of waveguide can be achieved under a relatively low temperature difference. Simulation results show that larger mode field size results in lower transmission loss, which is consistent with the experiment results.

关 键 词：钛扩散 铌酸锂波导 损耗 

分 类 号：TN252[电子电信—物理电子学]