一种新型GCT开通驱动电路拓扑  

A New Drive Circuit Topology for GCT Turning-on

作　　者：曾宏[1] 陈修林[1] 王三虎[1] 张顺彪[1] 王富光[1] 王玉杰[1] 

机构地区：[1]南车株洲电力机车研究所有限公司,湖南株洲412001

出　　处：《大功率变流技术》2015年第6期25-28,共4页HIGH POWER CONVERTER TECHNOLOGY

摘　　要：为了满足更大功率等级GCT器件对开通性能的需求,提出了一种用于IGCT门极驱动单元的新型开通驱动电路拓扑,并通过原理介绍、对比分析及样机测试表明,该拓扑在电路结构、控制信号数量、开通准备时间、IGCT响应速度等方面均优于原拓扑,大幅提高了IGCT的整体性能。In order to meet the turning-on performance of higher power level GCT device, it introduced a new turning-on drive circuit topology for IGCT gate drive unit. Principle introduction, comparing analysis and model board testing have been made to show that this topology is superior to the original one, such as circuit structure, the number of controlling signals, preparation time of IGCT turning-on and the response speed of IGCT, which greatly improves the total performance of IGCT.

关 键 词：IGCT 开通特性 门驱单元 GCT 

分 类 号：TN34[电子电信—物理电子学]