磁控溅射法结合异位退火制备MgB_2超导薄膜的研究  

Study on the fabrication of MgB_2 superconducting films by magnetron sputtering and annealing

作　　者：马军礼[1] 张松[1] 吴燕平[1] 王旭[1] 崔瑞瑞[1] 邓朝勇[1] 

机构地区：[1]贵州大学大数据与信息工程学院,贵阳550025

出　　处：《低温与超导》2015年第12期51-58,66,共9页Cryogenics and Superconductivity

基　　金：国家自然科学基金(51462003);贵州省国际科技合作计划(2013-7012);贵州大学研究生创新基金(2015084)

摘　　要：采用磁控溅射法,结合真空异位退火,成功制备MgB_2超导薄膜,探索了退火温度、退火时间、磁控溅射功率和溅射气压对MgB_2薄膜超导特性的影响。通过XRD、SEM和PPMS测量的结果来分析退火及溅射的工艺参数对MgB_2超导薄膜的晶体结构、表面形貌及超导性能的影响。研究表明,退火温度为670℃,退火时间为2h,MgB_2靶溅射功率控制在300W,Ar溅射气压保持为2Pa,MgB_2薄膜表现出最优的超导特性,其临界电流密度Jc为1.8×105A/cm2。MgB_2 superconducting films were prepared by magnetron sputtering and annealed in low vacuum environment.The effect of annealing temperature,annealing time,sputtering power and sputtering pressure on the superconducting properties of MgB_2 films were researched. The effect on the crystal structure and surface morphology and superconducting properties of MgB_2 superconducting films was analyzed by X-ray diffraction,scanning electron microscopy and physical property measurement system. When the annealing temperature was held at 670℃,the annealing time set to 2 hours,MgB_2 sputtering power maintained300 W and Ar sputtering pressure kept 2Pa,the sample showed the best superconducting performance and the critical current density Jcwas 1. 8 × 105 A / cm^2.

关 键 词：磁控溅射 MGB2 超导薄膜 退火 

分 类 号：O484.43[理学—固体物理]