PZT铁电薄膜疲劳状态下的电学性能  

The investigation of the electrical properties of ferroelectric PZT thin films during the fatigue process

作　　者：陈月圆[1] 朱慧[1] 张迎俏 汪鹏飞[1] 冯士维[1] 郭春生[1] 

机构地区：[1]北京工业大学电子信息与控制工程学院,北京100124

出　　处：《中国科技论文》2015年第22期2653-2656,2665,共5页China Sciencepaper

基　　金：高等学校博士学科点专项科研基金资助项目(20121103120019);国家自然科学基金资助项目(61201046);北京市自然科学基金资助项目(2132023)

摘　　要：为了探究阻碍PZT铁电薄膜在市场上得到广泛应用的疲劳失效机理,本文对PZT(锆钛酸铅)铁电薄膜在疲劳过程中的电滞回线、漏电流、保持损失和印记特性的变化进行了研究。研究结果表明:在欧姆导电区域,PZT薄膜体电阻率随疲劳进程而减小,表明薄膜中氧空位体积分子数增大;在疲劳进程中,电滞回线向负电压方向偏移产生印记,同时保持损失随疲劳进程加剧,且正极化方向的保持能力相对更好;利用双势阱和氧八面体结构模型来解释实验现象,得到在疲劳进程中原胞内部的双势阱变浅、变窄导致极化下降,并且氧空位更易在氧八面体顶端形成而导致疲劳中产生印记和极化保持在正方向上更好的结果。To investigate the fatigue mechanism of ferroelectric PZT thin films that hinders their full commercialization in the market,we studied the variation of hysteresis loop,leakage current,retention loss and imprint characteristics under different fatigue cycles.The results show that at Ohmic conduction zone the bulk resistivity of PZT decreases with the fatigue process,indicating the increase of oxygen vacancy concentration in the thin film.During fatigue process,the hysteresis loop displays a negative shift and the retention loss becomes exacerbated,while it performs better in the positive polarization direction.The experimental phenomenon can be explained by using double well potential and oxygen octahedral model,and following conclusions can be gained：during fatigue,the double well potential inside the primitive cell becomes narrow and shallow,which leads to the decrease of the polarization;the oxygen vacancies can be formed at the top of oxygen octahedron more easily,leading to the imprint and the better retention performance in positive polarization direction.

关 键 词：铁电薄膜 疲劳 漏电流 保持特性 印记 矫顽电压 

分 类 号：TP333[自动化与计算机技术—计算机系统结构]