掺镁铌酸锂电光调制位相阵列光栅  

Electro-optical tunable phase array grating based on periodically poled MgO-doped LiNbO_3

作　　者：佟曼[1] 范天伟[1] 陈云琳[1] 柯笑晗 

机构地区：[1]北京交通大学理学院微纳材料及应用研究所,北京100044

出　　处：《中国科技论文》2015年第22期2678-2680,2696,共4页China Sciencepaper

基　　金：高等学校博士学科点专项科研基金资助项目(20130009110008);国家自然科学基金资助项目(61178052)

摘　　要：设计并制备了基于周期极化掺镁铌酸锂(PPMgLN)晶体的二维六角可调位相阵列光栅,在较低外加调制电压下,获得了清晰的阵列光栅泰伯(Talbot)光衍射自成像。试验研究了不同相位差时阵列光栅的近场光衍射图样及取样光点处的相对光强分布,在占空比D为52%、相位差Δφ为0.75π、泰伯分数β为0.5时,近场光衍射相对光强最大。同时在较低外加调制电压(0.461kV)下,即可获得清晰泰伯衍射图样。该研究可为掺镁铌酸锂阵列光栅在集成光学领域的应用提供参考。The 2D hexagonal tunable phase array grating was designed and fabricated based on the periodically poled LiNbO_3 crystal.And the clear self-image of the array grating Talbot diffraction was obtained at a lower external electric field.The near field optical diffraction pattern at various phase differences and the relative light intensity at sampling spot were experimentally studied,and the maximum light intensity for near field diffraction can be reached when the array duty cycle D=52%,phase differenceΔφ=0.75π,and Talbot fractionβ=0.5.Moreover,apreferable self-image pattern can be observed under an unprecedented lowest voltage of 0.461 kV.The results in current study can provide references for the application of MgO-doped LiNbO_3 phase array grating in integrated optics.

关 键 词：阵列光栅 周期极化掺镁铌酸锂 泰伯效应 铟锡氧化物(ITO)薄膜 

分 类 号：TN25[电子电信—物理电子学]