碳化硅ICP刻蚀速率及表面形貌研究  

Study on Etch Rate and Surface Morphology of Silicon Carbide by ICP

作　　者：崔海波[1] 梁庭[1] 熊继军[1] 喻兰芳[1] 王心心[1] 王涛龙 

机构地区：[1]中北大学,仪器科学与动态测试教育部重点实验室,电子测试技术国防科技重点实验室,山西太原030051

出　　处：《仪表技术与传感器》2015年第9期1-3,7,共4页Instrument Technique and Sensor

基　　金：国家自然科学基金资助项目(51075375);国家重点基础研究发展计划(“973”计划)资助项目(2010CB334703)

摘　　要：SiC材料由于其高的禁带宽度（2.3~3.4 eV）,10倍于Si的击穿电压而越来越受到重视,尤其是在高温环境中,是制作高温器件的理想材料。但同时由于SiC的高硬度,化学性质稳定,使得SiC的加工也变的较为困难。刻蚀作为加工SiC的理想手段运用也越来越广泛,文中就此展开研究,详细研究ICP刻蚀过程中各参数对其刻蚀速率及表面形貌的影响,时加工SiC具有一定指导意义、Due to its high band width（2.3~3.4eV） of SiC,the breakdown voltage is 10 times of the breakdown voltage of Si and has been paid more and more attention,especially in the high temperature environment,and it is the ideal material for manufacturing high temperature devices.But at the same time,due to the high hardness of SiC and stable chemical property,the processing of SiC has become more difficult.As an ideal means,etching processing is more and more widely used,the research was launched in this paper.The detailed study of the parameters affecting the ICP etching process for the etch rate and surface morphology was launched,which has certain guiding significance to the processing of SiC.

关 键 词：ICP刻蚀速率 刻蚀形貌 碳化硅 

分 类 号：TN212[电子电信—物理电子学]