可嵌入RFID标签的低功耗单栅非易失性存储器  

Low-Power Embedded Single-Poly Non-Volatile Memory for the RFID Tags

作　　者：杨亚楠[1] 杨晓龙[1] 陈力颖[1] 

机构地区：[1]天津工业大学电子与信息工程学院,天津300387

出　　处：《半导体技术》2016年第1期16-21,共6页Semiconductor Technology

基　　金：天津市应用基础与前沿技术研究计划资助项目(15JCYBJC16300)

摘　　要：采用Skysilicon 0.35μm标准CMOS工艺设计并制造了一种可嵌入射频识别(RFID)标签的低功耗单栅非易失性存储器(SPNVM)。与传统的采用双栅工艺制造的电可擦除可编程只读存储器(EEPROM)和快闪存储器相比较,所提出的单栅存储器具有更低的制造成本和功耗,更多的可编程次数以及更简单的控制电路。该存储器是将三个MOS晶体管的栅极连在一起作为等效浮栅,数据以电压的形式输出。利用Fowler-Nordheim电子隧穿机制对浮栅注入或泄放电子,这使得编程过程可以自动停止,且浮栅不会被过度编程。所提出的存储器结构仅使用两个正电压便可实现擦除、写入和读取操作。测试结果表明,对存储单元进行擦除和数据写入所需时间均为80 ms,存储器可以实现超过1 000次的编程循环,在芯片未封装的情况下,数据保持时间至少为14天。A low-power embedded single-poly non-volatile memory（ SPNVM） for radio frequency identification（ RFID） tags was designed and implemented in Skysilicon 0. 35 μm standard CMOS process. The proposed single-poly memory has lower fabricating cost,lower power consumption,more programmable times and simpler control circuits comparing with the traditional electrically erasable programmable read only memory（ EEPROM） and flash memory which implemented in double-poly process.It connects the gates of three MOS transistors as an equivalent floating gate,and the data stored in the memory were output in voltage. The Fowler-Nordheim electron tunneling mechanism was used to charge or discharge the floating gate,which made the programming process automatically stop,and the floating gate could not be over programmed. Erase,write and read operations of the proposed memory structure could be carried out using only two positive voltages. The test results show that the erase or write storage unit time is about 80 ms,program cycles of the memory are more than 1 000 times and the data hold time is at least 14 days in the case of the chip without packaged.

关 键 词：非易失性存储器(NVM) Fowler-Nordheim(FN)隧穿 射频识别(RFID) 标准CMOS工艺 单栅 

分 类 号：TN432[电子电信—微电子学与固体电子学]