VDMOS结终端技术对比研究  

Contrast Research of VDMOS Junction Terminal Technology

作　　者：赵圣哲 李理 赵文魁 

机构地区：[1]深圳方正微电子,广东深圳518116

出　　处：《半导体技术》2016年第1期46-50,共5页Semiconductor Technology

摘　　要：垂直双扩散金属-氧化物半导体场效应管(VDMOS)器件的反向耐压能力主要取决于器件结构中的特定pn结反偏击穿电压,由于pn结特性,击穿通常发生在结终端。随着结终端技术的发展,功率VDMOS器件的击穿特性有了很大的提升。主要介绍了几种目前常用的结终端技术的结构及工作原理,包括场限环技术、p+偏移技术、横向变掺杂技术、结终端扩展技术和RESURF技术。重点探讨了每种方法的优缺点,并指出几种结终端技术不同的设计难度、工艺控制和实现要点等。同时固定元胞设计,采用不同的结终端技术试制了600 V VDMOS产品,对比了采用不同结终端技术制作芯片的工艺制造以及成本,可为实际的制造生产提供理论指导。The reverse withstand voltage ability of vertical double-diffusion metal-oxide-semiconductor（ VDMOS） devices depends on the reverse breakdown voltage of the specific pn junction in the device structure. Due to the characteristics of the pn junction,the breakdown usually occurs in the terminal of the junction. With the development of junction terminal technology,the breakdown characteristics of power VDMOS devices have been greatly improved. The structures and working principles of several common junction terminal technologies were introduced,including the field limiting ring,p＋shift,variation of lateral doping,junction termination extension and RESURF technology. The advantages and disadvantages of each method were discussed,and the difficulty of designs,process control and realized points were proposed. And the fixed cell design,the 600 V VDMOS products were produced by the different junction terminal technologies.The process manufacturing and cost of the chip produced by the different junction terminal technologies were compared. This can provide a theoretical guidance for the actual production.

关 键 词：结终端 场限环(FLR)技术 p+偏移技术 横向变掺杂(VLD)技术 结终端扩展(JTE)技术 RESURF技术 

分 类 号：TN386[电子电信—物理电子学]