低温共烧Na_2O-B_2O_3-SiO_2玻璃/Al_2O_3复合材料烧结工艺的研究  

Sintering process of low temperature co-fired Na_2O-B_2O_3-SiO_2 glass/Al_2O_3 composite materials

作　　者：张培忠[1] 胡一晨[1] 王淳[1] 张明[1] 

机构地区：[1]华东理工大学材料科学与工程学院,上海200237

出　　处：《电子元件与材料》2016年第1期23-25,共3页Electronic Components And Materials

摘　　要：采用烧结法制备了低温共烧Na_2O-B_2O_3-SiO_2玻璃/Al_2O_3复合材料。研究了玻璃粉末的粒度、玻璃与Al_2O_3质量比,成型压力和热处理制度对复合材料烧结性能和电学性能的影响。结果表明,玻璃粉末中位径为1.233μm、玻璃/Al_2O_3质量比为3:7、成型压力为15 MPa、烧结温度为900℃以及保温时间为2 h时,复合材料具有较高的体积电阻率(3.8×1012?·cm)、较低的介电常数(6.86)和介电损耗(0.001 43),可以满足基板材料对电学性能的要求。Low temperature co-fired Na20-B203-SiO2/A1203 composites were prepared by sintering method. The effect of the particle size of glass powder, mass ratio of glass to A1203, molding pressure and heating treatment on the sintering and electrical performance were investigated. The results show that when the particle size of the glass is 1.233 μm, the mass ratio of glass to Al2O3 is 3：7, molding pressure is 15 MPa, sintefing temperature is 900℃, and the holding time is 2 h, the apparent porosity is 0.55%. In addition, the composite material has high volume resistivity of 3.8×10^12Ω·cm, low dielectric constant of 6.86 and low dielectric loss of 0.001 43, which can meet the requirements of the electrical properties of the substrate materials.

关 键 词：钠硼硅玻璃 氧化铝 低温共烧陶瓷 烧结性能 介电性能 显气孔率 

分 类 号：TQ174.1[化学工程—陶瓷工业]