SiC光学材料的电弧增强等离子体加工方法  

Arc-enhanced plasma machining method of Si C optical material

作　　者：史宝鲁 戴一帆[1,2] 解旭辉[1,2] 周林[1,2] 

机构地区：[1]国防科技大学机电工程与自动化学院,湖南长沙410073 [2]超精密加工技术湖南省重点实验室,湖南长沙410073

出　　处：《国防科技大学学报》2015年第6期34-38,共5页Journal of National University of Defense Technology

基　　金：国家重点基础研究发展计划资助项目(2011CB013204)

摘　　要：Si C光学材料具有高化学稳定性,其在普通的等离子体加工中难以获得较高的加工效率。在等离子体加工实验中,发现提高等离子体的自身射频电压可增强等离子体与Si C材料之间的电弧放电作用,而借助电弧的增强作用可提高Si C材料的加工效率,因此提出电弧增强等离子体加工方法。为研究电弧的形成原理,使用自制的探针分别测量了普通电感耦合等离子体和电弧增强等离子体的电压。分别使用传统方法和电弧增强方法对S-Si C进行直线扫描加工实验,证明了电弧增强等离子体加工方法具有更高的加工效率。Since the chemical stability of SiC is extremely high, there is a low efficiency of SiC mirrors for conventional inductively coupled plasma （ICP） processing method. The plasma processing experiment reveals that the increase of plasma radio-frequency can enhance the arc discharge effect between plasma and SiC. The enhancing effect of arc can increase the processing efficiency of SiC, so the arc-enhanced plasma （AEP） processing method was developed. In order to research the formation principle of arc, the voltages of ICP and AEP were measured respectively by using the self-made probe. The conventional and the arc-enhanced methods were employed respectively to conduct linear scanning machining experiment on the sintered silicon carbide （ S-SiC）, which demonstrates the higher processing efficiency of AEP method.

关 键 词：电感耦合等离子体 射频电压 电弧等离子体 碳化硅 

分 类 号：TH161[机械工程—机械制造及自动化]