Cu-Ti合金与H_2O_2直接氧化法制备Cu掺杂TiO_2薄膜  

Preparation of Cu Doped TiO_2 Films Through Direct Oxidation of Cu-Ti Alloys with Hydrogen Peroxide Solution

作　　者：王先飞[1] 潘冶[1] 吴继礼[1] 李星洲[1] 

机构地区：[1]东南大学材料科学与工程学院,南京211189

出　　处：《材料工程》2016年第1期26-32,共7页Journal of Materials Engineering

基　　金：中央高校基本科研业务费专项资金(2242014R20012);江苏省博士后科研资助计划(1302045B)

摘　　要：以Cu-Ti合金为基体,采用含H_2O_2溶液直接氧化法制备Cu掺杂TiO_2薄膜,利用扫描电子显微镜(SEM)、能谱仪(EDS)和X射线衍射仪(XRD)对薄膜形貌、化学成分和相组成进行分析。结果表明:所制薄膜通过溶解-沉积机理形成,合金表面先沉积Cu掺杂的非晶态TiO_2薄膜,经空气中450℃热处理1h获得Cu掺杂的锐钛矿型晶态TiO_2薄膜。含H_2O_2溶液中需加入一定量聚碳酸酯或聚乙烯乙酸酯,以促进非晶态TiO_2在合金表面的沉积。所制薄膜对罗丹明B具有优异的光催化降解作用,在12W紫外光下照射4h后,Cu_(30)Ti_(70)合金表面形成的薄膜对罗丹明B溶液(20mg/L)的降解率达到31.7%。Cu doped anatase TiO2 films were prepared through direct oxidation of Cu-Ti alloys with hydrogen peroxide solutions.The morphologies,composition and phase structure of the films were examined by scanning electron microscopy（SEM）,energy dispersive spectroscopy（EDS）and X-ray diffraction（XRD）.Results show that the films are formed by dissolution-precipitation mechanism.Cu doped amorphous TiO2 films firstly deposit on the surface of Cu-Ti alloys,then Cu doped anatase TiO2 films are obtained by the followed heat treatment at 450℃for 1hin air.Addition of polycarbonate or polyvinyl acetate in hydrogen peroxide solution is needed to promote the deposition of amorphous TiO2 and the formation of Cu doped TiO2 films.Degradation tests on rhodamine B reveal an excellent photocatalytic property of the films.31.7% rhodamine B（20mg/L）can be degraded after 4h of illumination under a 12 W UV lamp with the prepared film on the surface of Cu（30）Ti（70） alloy.

关 键 词：TIO2 半导体薄膜 光催化 化学合成 

分 类 号：O484[理学—固体物理]