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作 者:胡俊涛[1,2] 邓亚飞[1,2,3] 梅文娟[1,2] 宗艳凤
机构地区:[1]特种显示技术国家工程实验室特种显示技术教育部重点实验室省部共建现代显示技术国家重点实验室,安徽合肥230009 [2]合肥工业大学光电技术研究院,安徽合肥230009 [3]合肥工业大学仪器科学与光电工程学院,安徽合肥230009
出 处:《液晶与显示》2016年第1期74-79,共6页Chinese Journal of Liquid Crystals and Displays
基 金:国家自然科学基金(No.21174036);国家高技术研究发展计划(863计划)(No.2012AA011901);科技部973计划前研专项(No.2012CB723406)~~
摘 要:本文采用一种结构为Ag/MoO_3/Ag的金属/氧化物/金属(M_1/O/M_2)叠层替代ITO作为OLED器件的阳极,研究Ag/MoO_3/Ag叠层结构变化对于OLED器件电极透过率、亮度、光谱等性能的影响。实验采用真空蒸镀方法制备了一系列器件,器件结构为Ag/MoO_3/Ag/MoO_3(10nm)/NPB(40nm)/Alq_3(60nm)/LiF(1nm)/Al(150nm)。对比器件的电压-电流密度、电压-亮度、光谱特性等数据,表明Ag/MoO_3/Ag的结构为20/20/10(nm)时,器件性能较好。在驱动电压为11V时,其亮度达到18 421cd/m^2,电流效率为2.45cd/A;且因器件中存在微腔效应,其EL光谱蓝移,半高宽变窄。但考虑到530nm处其电极透过率仅为17%,所以经换算该器件实际发光亮度比ITO电极器件更高。该Ag/MoO_3/Ag叠层阳极制作相对简单,经优化后在顶发射和柔性OLED器件方面将具有一定的应用前景。A metal/oxide/metal (M1/O/M2) stack Ag/MoO3/Ag is introduced to fabricate organic light- emitting devices (OLEDs) as a anode instead for ITO. Effects of different structures of the anode on transmit-tance, brightness, spectrum of OI.EDs are researched in this paper. A series of devices is fabricated by the means of vacuum evaporating with the structure of Ag/MoO3/Ag/MoOa (10 nm)/NPB(40 nm)/Alq:~ (60 nm)/LiF(1 nm) / A1(150 nm). Current density-voltage characteristic, brightness-voltage characteristic, spec- trogram characteristic of the devices are analyzed. It is found that brightness of the device which is applied Ag/MoO3/Ag 20/20/10(nm) as the anode reaches the maximum of 18 421 cd/m2 and the best current effi- ciency of 2.45 cd/A with the operating voltage of 11 V. Because of microcavity effect, the center wavelength of El. spectra is blue-shifted and the full width at half maximum becomes narrower. But considering its elec- trode transmittance is only 17 % at 530 nm, the OLED device is actually brighter than the ITO electrode device by the conversion. They can be used as anodes for top-emitting and transparent flexible OLED because of simplicity of the production.
分 类 号:TN383.1[电子电信—物理电子学]
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