两级微型逆变器GaN DC/DC电路软开关特性和损耗分析  

LOSS ANALYSIS AND SOFT-SWITCHING CHARACTERISTICS OF GAN BASED DC/DC CONVERTER FOR TOW-STAGE MICROINVERTER

作　　者：张雅静[1] 郑琼林[1] 李艳[1] 

机构地区：[1]北京交通大学电气工程学院,北京100044

出　　处：《太阳能学报》2016年第1期32-39,共8页Acta Energiae Solaris Sinica

摘　　要：采用GaN FET正反激高增益DC/DC电路以实现微型逆变器高效率、高升压比、减小变压器体积的目标。首先介绍GaN FET器件的结构及其特性;其次分析正反激高增益DC/DC电路的工作原理及其软开关特性,并给出该拓扑理论损耗分析;最后搭建200 W GaN FET正反激高增益DC/DC电路的仿真及实验验证,理论和实验结果证明该拓扑适用于高效率的微型逆变器前级变换器。Two-stage micro-inverter topology requires high boost converter to generate stable DC bus voltage for the inverter. The GaN FET based high gain DC/DC circuit can achieve high efficiency, high step-up ratio , which will reduce the volume and enhance the efficiency of transformer. GaN FET has the characteristics of low parasitic parameters, no reverse recovery losses, high speed, which will reduce the switching losses of the device. Soft switching characteristics of the flyback-forward high gain DC/DC converter can be further reduced the stress of GaN FET. Therefore the switching losses of GaN FET will be reduced, and the efficiency of the converter will be improved. The power loss analysis of GaN FET based flyback-forward high gain DC/DC converter is discussed in detail. A 200 W GaN FET based flyback-forward high gain DC/DC converter is established. Theoretical analysis and experiment results verified that the topology is applicable for high efficiency micro-inverter.

关 键 词：微型逆变器 两级 GAN FET 高增益 正反激 

分 类 号：TM46[电气工程—电器]