掺钛氧化锌纳米薄膜微结构及其光电性能研究  

Studies of microstructures and optoelectronic properties of the Ti-doped zinc oxide(TZO)nano-films

作　　者：陈真英[1,2] 聂鹏[1] 廖庆佳 黄文华[1] 孟炎[1] 熊定康[1] 邓文[1] 

机构地区：[1]广西大学物理科学与工程技术学院,南宁530004 [2]广西大学行健文理学院,南宁530004

出　　处：《功能材料》2016年第1期1077-1081,共5页Journal of Functional Materials

基　　金：国家自然科学基金资助项目(11265002);广西自然科学重点基金资助项目(2010GXNSFD013036);广西大学行健文理学院科研基金资助项目(2014ZKLX01)

摘　　要：采用射频磁控溅射法,以不同保温时间的掺钛氧化锌为靶材在普通玻璃衬底上制备了TZO（掺钛氧化锌）薄膜样品,测试其微结构和光电性能,从而获得制备性能优越的TZO 薄膜所需靶材的最佳条件.测试结果表明,所有样品均为具有c 轴择优取向的六角铅锌矿多晶纳米薄膜;靶材烧结温度和保温时间对薄膜微结构和光电性能有较大影响;以经1500 ℃烧结并保温6h的靶材所制备的薄膜光电性能较好,具有较大晶粒尺寸,在可见光区（400-760nm）有较高的平均透过率91.16%,较低电阻率1.07×10^-4 Ω·cm,较高的载流子浓度和较大迁移率.In order to find the best preparation condition,the Ti-doped zinc oxide(TZO)films were deposited on the common glass substrates with different-heat-preservation-time targets by radio frequency(RF)magnetron sputtering,respectively.The microstructures and optoelectronic properties of the films were tested in details,the results show that all samples are polycrystalline with a hexagonal structure and have a preferred orientation perpendicular to the substrate,the microstructures and the optoelectronic properties of the TZO films were strongly affected by the sintering temperature and the heat-preservation time of the targets.It has been found that the TZO film prepared with the target which was sintered at 1 500℃then preserved for 6hours has better optoelectronic property in comparison with the others,that is,it has relative larger gain size,higher average optical transmittance of 91.16% with wavelength from 400 to 760nm,lower resistivity of 1.07×10-4Ω·cm,higher carrier concentration and mobility.

关 键 词：掺钛氧化锌薄膜 磁控溅射 保温时间 微结构 光电性能 

分 类 号：TB34[一般工业技术—材料科学与工程]