p型ZnO薄膜的研究进展  

Research Progress of p-Type ZnO Thin Films

作　　者：文俊伟[1] 王小平[1] 王丽军[1] 李剑[1] 刘凌鸿 于颖[1] 

机构地区：[1]上海理工大学理学院,上海200093

出　　处：《材料导报》2015年第23期12-17,共6页Materials Reports

基　　金：上海市教委重点创新项目(14ZZ137);沪江基金(B14004);上海理工大学国家级项目培育基金项目(14XPM04)

摘　　要：ZnO材料以其优良的光电特性和相对低廉的成本而倍受人们的青睐,但是要获得高质量的p型ZnO薄膜难度极大,这已成为阻碍ZnO基光电器件走向实用化的主要障碍。综述了p型ZnO薄膜掺杂面临的困难、p型ZnO掺杂理论进展及实现p型ZnO薄膜的各种掺杂方法,并对p型ZnO薄膜的各种制备工艺方法进行了概括和比较,最后指出了提高p型ZnO薄膜质量的努力方向。ZnO is popular for its excellent photoelectric properties and relatively cheap cost.But it is extraordinarily difficult to obtain high quality p-type ZnO thin films,which has become the main obstacle to the practical application of the ZnO based photoelectric device.The difficulties of p-type ZnO thin films doping,the progress of p-type ZnO doping theory and the diversified doping method of acquiring p-type ZnO thin films are summarized.In addition,the various preparation methods of p-type ZnO thin films are generalized and compared.The orientation of improving the quality of p-type ZnO thin films is pointed out in the end of the article.

关 键 词：ZNO薄膜 制备工艺 掺杂 p型电导 

分 类 号：TB43[一般工业技术]