热丝化学气相沉积法制备金刚石薄膜的生长取向及内应力研究  

Study of Internal Stress and Film Growth of Diamond Films by Hot Filament Chemical Vapor Deposition

作　　者：邢文娟[1] 汪建华[1] 王传新[1] 

机构地区：[1]武汉工程大学等离子体化学与新材料重点实验室,武汉430073

出　　处：《材料导报》2007年第S2期305-308,共4页Materials Reports

基　　金：湖北省科技攻关计划支持(项目编号2002AA105A02);湖北省教育厅2004年创新团队项目支持

摘　　要：采用热丝化学气相沉积法在YG6硬质合金基体上制备出了金刚石薄膜,研究了基片与热丝间的距离以及负偏压对金刚石薄膜的生长取向和内应力的影响。采用扫描电子显微镜对沉积得到的金刚石薄膜的生长取向进行了表征,利用激光Raman光谱对金刚石薄膜的内应力进行了计算。结果表明:当基片与热丝间的距离保持在4.0～8.5mm,基体温度保持在750～800℃时,沉积出的金刚石膜表面晶形主要为(111)面,其内应力随着距离的增加而逐渐减小,在8.0mm时为最小;但是当基底温度高于800℃时,内应力就会随着温度的升高而增加;最终结果导致膜基附着力减弱。Diamond films are deposited on tungsten carbide YG6 by hot filament chemical vapor deposition. A study is presented on effect of the growth orientation and internal stress in diamond coatings, which are affected by the distance between hot filament and substrate, and negative bia-voltage. The results show that when the distance between the substrate and hot filament ranges from 4.0mm to 8.5mm, the morphology of diamond fihns mainly display a(111) face orientation. The internal stress reduces gradually with increasing distance, and the lowest internal stress is achieved at the distance of 8.0mm. When the substrate temperature is above 800℃, the internal stress improves with increasing temperature, which leads to a decrease in the adhesion of diamond films on cemented carbide.

关 键 词：热丝化学气相沉积 金刚石薄膜 薄膜生长取向 内应力 

分 类 号：TB383.2[一般工业技术—材料科学与工程]