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作 者:赵欣[1]
机构地区:[1]中国民用航空飞行学院研究生处,广汉618307
出 处:《化工新型材料》2016年第1期165-167,170,共4页New Chemical Materials
基 金:国家自然科学基金(50732005);四川省科技厅基金项目(2015ZR0034);中国民用航空飞行学院科研基金项目(J2014-92;Q2012-126)
摘 要:以高纯(99.9999%)Ge、Zn、P单质为原料,按化学计量比并富P 0.5%配料,采用改进的单温区合成法和分级冷却技术合成出单相、致密的ZnGeP_2多晶原料,实现了富余P与合成产物有效分离,并对反应机理进行了讨论。新合成方法安瓿制作简单,装料、抽真空方便,克服了传统两温区法装料、抽真空操作困难的问题。经X射线衍射和EDS成分分析,结果表明:采用改进的单温区法合成的ZnGeP2多晶原料纯度高,元素原子比接近ZnGeP_2的理想化学计量比,为生长高质量单晶体提供了优质的原料保障。Single-phase ZnGeP2 polycrystals were successfully synthesized by modified single-temperature zone method(MSTZM),used directly high pure(99.9999%)Zn,Ge,and red P elements according to the ZnGeP2 stoichiometry with the excess of 0.5% P-rich.In order to separate the residual phosphorus from the synthetic products availably,a modified cooling means was used in the cooling process of the melt,which can make the residual P vapor in the melt zone transported to the other zone of the ampoule owing to the driving force caused by the high vapor pressure difference.The mechanism of reaction was discussed.This improved raw material preparation process overcame the shortcomings of conventional two-temperature zone method in operation.XRD and EDS results indicated that the synthesized polycrystals had high purity and closed to ideal stoichiometry ratio.These results demonstrated that MSTZM was a simple and preferable method for ZnGeP2 polycrystal synthesis and can laid a reliable foundation for the single crystal growth.
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