Si_3N_4-MoSi_2复合陶瓷导电性能研究  

Study on the Conductive Property of Si_3N_4-MoSi_2 Composite Ceramics

作　　者：谭威[1] 林旭平[1] 马景陶[1] 张宝清[1] 

机构地区：[1]清华大学新型陶瓷与精细工艺国家重点实验室,北京100084

出　　处：《稀有金属材料与工程》2011年第S1期211-214,共4页Rare Metal Materials and Engineering

基　　金：国家自然科学基金重大研究计划资助(90916025)

摘　　要：以Si3N4、SiO2为初始原料,以MgO、Al2O3为烧结助剂,在N2保护气氛下,通过无压烧结制备了致密的Si2N2O陶瓷。烧结后的产物主晶相为Si2N2O,并含有少量的β-Si3N4和玻璃相,β-Si3N4相随着初始原料Si3N4/SiO2摩尔比的增大而增加。初始原料中Si3N4/SiO2摩尔比为1时,烧结后样品的相对密度相对较高,可达98.3%,抗弯强度达293MPa。初始原料中Si3N4/SiO2摩尔比增大可降低制备的Si2N2O陶瓷的介质损耗,而介电常数主要与样品的相对密度有关。Dense Si2N2O ceramics were fabricated using Si3N4 and SiO2 as starting materials and MgO and Al2O3 as sintering additives by pressureless sintering process under N2 atmosphere. The prepared samples consist of Si2N2O phase and a small amount of β-Si3N4 and glass phase. The amount of β-Si3N4 phase is increased with the increase of the molar ratio of Si3N4/SiO2 in starting materials. When the molar ratio of Si3N4/SiO2 is 1, the prepared sample has a higher relative density of 98.3% and the flexural strength of the sample reaches 293 MPa. The dielectric loss of the Si2N2O ceramics can be lowered by increasing the molar ratio of Si3N4/SiO2 in starting materials, but the dielectric constant of the Si2N2O ceramics is more dependent on the relative densities of the samples.

关 键 词：氧氮化硅 介电性能 氮化硅 氧化硅 

分 类 号：TQ174.1[化学工程—陶瓷工业]