高压高温制备Sb掺杂的P型ZnO及电致发光  

Formation of Stable and Reproducible Low Resistivity and High Carrier Concentration P-type ZnO Doped at High Pressure with Sb

作　　者：崔梦男 李沛航[1] 万玉春[1] 

机构地区：[1]长春理工大学材料科学与工程学院,长春130022

出　　处：《长春理工大学学报（自然科学版）》2015年第6期87-90,共4页Journal of Changchun University of Science and Technology(Natural Science Edition)

基　　金：吉林省自然基金(20140101052JC)

摘　　要：以ZnO和Sb_2O_3为前驱物,在5GPa、1100~1450℃条件下,制备出电学性能稳定的掺Sb的p型ZnO(记作ZnO:Sb)。其中1450℃掺杂4.6%Sb时合成了性能最好的P型ZnO:Sb,电阻率为1.6×10^(-2)Ωcm,载流子浓度为3.3×10^(20)cm^(-3),迁移率为12.1cm/V s。p型导电是由位于Zn位的Sb和两个Zn空位组成的复合受主引起的。测定了受主能级为113meV,讨论了压力对p型ZnO的形成和电性能的影响。此外,以高质量ZnO纳米线作为LED的发射层,通过将p型ZnO:Sb中的空穴注入ZnO纳米线中实现了激光发射。当注入电流达到20mA时,电致发光(EL)的功率可达到10mW。Stable p —type Sb—doped ZnO（ZnO：Sb） was fabricated reproducibly by sintering mixture of ZnO and Sb2O3powders under 5GPa at temperatures of 1100～1450℃.The best p—type ZnO：Sb with resistivity of 1.6×10^-2cm,carrier concentration of 3.3×10^20cm^-3,and mobility of 12.1cm/Vs was obtained by doping 4.6at.%Sb and sintering at 1450℃.The p —type conduction is due to complex acceptor formed by one substitutional Sb at Zn site and two Zn vacancies.The acceptor level was measured to be 113 meV.Effect of pressure on formation and electrical properties of the p —type ZnO：Sb is discussed.Furthermore,we show that by employing high quality ZnO nanowires as the active layer of a LED,with holes injected from p—type ZnO prepared in a high pressure high temperature route.Obvious emission can be achieved,and the power of the emission can reach 10 mW when the injection current is 20 mA.

关 键 词：高温高压 P型ZNO 锑掺杂 电致发光 

分 类 号：TN304[电子电信—物理电子学]