Observation of a Current Plateau in the Transfer Characteristics of InGaN/AlGaN/AlN/GaN Heterojunction Field Effect Transistors  

作　　者：闫俊达 王权 王晓亮 肖红领 姜丽娟 殷海波 冯春 王翠梅 渠慎奇 巩稼民 张博 李百泉 王占国 侯洵 

机构地区：[1]Key Lab of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083 [2]School of Electronic Engineering, Xi'an University of Posts and Telecommunications, Xi'an 710049 [3]Beijing Key Laboratory of Low Dimensional Semiconductor Materials and Devices, Beijing 100083 [4]ISCAS-XJTU Joint Laboratory of Functional Materials and Devices for Informatics, Beijing 100083 [5]Beijing Huajin Uhuangwei Technology Co., Ltd., Beijing 100036

出　　处：《Chinese Physics Letters》2015年第12期113-116,共4页中国物理快报（英文版）

基　　金：Supported by the Knowledge Innovation Project of the Chinese Academy of Sciences;the National Natural Science Foundation of China under Grant Nos 61204017 and 61334002;the National Basic Research Program of China;the National Science and Technology Major Project of China

摘　　要：Direct-current transfer characteristics of （InGaN）/A1GaN/A1N/GaN heterojunction field effect transistors （HFETs） are presented. A drain current plateau （IDs = 32.0 mA/mm） for Vcs swept from ＋0.7 V to -0. 6 V is present in the transfer characteristics of InGaN/AIGaN/AIN/GaN HFETs. The theoretical calculation shows the coexistence of two-dimensional electron gas （2DEG） and two-dimensional hole gas （2DHG） in InGaN/AIGaN/A1N/GaN heterostructures, and the screening effect of 2DHG to the 2DEG in the conduction channel can explain this current plateau. Moreover, the current plateau shows the time-dependent behavior when IDs Vcs scans repeated are conducted. The obtained insight provides indication for the design in the fabrication of GaN-based super HFETs.Direct-current transfer characteristics of （InGaN）/A1GaN/A1N/GaN heterojunction field effect transistors （HFETs） are presented. A drain current plateau （IDs = 32.0 mA/mm） for Vcs swept from ＋0.7 V to -0. 6 V is present in the transfer characteristics of InGaN/AIGaN/AIN/GaN HFETs. The theoretical calculation shows the coexistence of two-dimensional electron gas （2DEG） and two-dimensional hole gas （2DHG） in InGaN/AIGaN/A1N/GaN heterostructures, and the screening effect of 2DHG to the 2DEG in the conduction channel can explain this current plateau. Moreover, the current plateau shows the time-dependent behavior when IDs Vcs scans repeated are conducted. The obtained insight provides indication for the design in the fabrication of GaN-based super HFETs.

关 键 词：AlGaN Observation of a Current Plateau in the Transfer Characteristics of InGaN/AlGaN/AlN/GaN Heterojunction Field Effect Transistors INGAN AlN 

分 类 号：TN386[电子电信—物理电子学] TN312.8