823×592元内线转移CCD图像传感器  

An Interline CCD Image Sensor with 823×592 Pixels

作　　者：杨洪[1] 雷仁方[1] 郑渝[1] 吕玉冰[1] 翁雪涛[1] 

机构地区：[1]重庆光电技术研究所,重庆400060

出　　处：《半导体光电》2015年第6期905-908,共4页Semiconductor Optoelectronics

摘　　要：采用三层多晶硅、埋沟、双层金属工艺研制了1/2英寸823×592、8.3μm×8.3μm内线转移CCD,该器件设计制作了纵向抗晕结构,实现了内线转移器件光晕抑制。该器件水平驱动频率可达30MHz,峰值响应波长位于550nm,动态范围62.6dB。By using triple-layer polysilicon,burried channel,double-layer metal process,a1/2inch interline CCD image sensor with 823（H）×592（V）elements was successfullly developed.By adopting a vertical overflow drain principle,blooming was suppressed in domestic device design for the first time,and no significant loss in transfer efficiency was observed in the horizontal register.It is indicated that the horizontal driving frequency can reach 30 MHz,the peak response appears at 550 nm,and the dynamic range reaches 62.6dB.

关 键 词：内线转移CCD 光电特性 纵向抗晕 

分 类 号：TN386.5[电子电信—物理电子学]