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机构地区:[1]中国科学院上海微系统与信息技术研究所,上海200050
出 处:《半导体光电》2015年第6期918-921,共4页Semiconductor Optoelectronics
基 金:上海市科委基础研究重点项目(14JC1407500)
摘 要:提出了一种通过湿法腐蚀实现的基板缺陷共面波导电磁带隙结构,并进行了建模仿真、加工和测试。重点研究了基板缺陷结构与传统金属缺陷结构的差异,以及采用湿法腐蚀工艺的优势。实验结果显示:新结构具有明显的电磁带隙特性;与干法刻蚀工艺相比,采用湿法腐蚀工艺加工可以获得更宽的阻带范围和更强的阻带抑制。该结构完整保留了50Ω共面波导的信号线和接地板金属,可以与传统的金属缺陷结构结合,以获得性能更好的器件。Traditional study on Electromagnetic Band-Gap(EBG)structures often focuses on the pattern of signal trace metal and Defected Ground Structure(DGS).In this paper,a Substrate-Defected Coplanar Waveguide(SD-CPW)was obtained by wet-etching the substrate to periodic pits.The differences between substrate-defected structure and traditional EBG structures was studied and also the advantages of wet etching were also proved.After the fabrication and measurement,a wide frequency band gap is observed and the EBG characteristic is proved.Compared with dry etching,wet etched structure turns out a deeper stopband and a wider bandwidth.While the 50 Ω metal trace and ground remaining intact,the substrate-defected structure can be combined with traditional EBG structures to get devices with better performance.
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