纳米CMOS电路在单粒子效应下可靠性研究进展  

Research Advance in Reliability for Nano-Meter CMOS Circuits Under Single Event Effects

作　　者：刘保军[1,2] 蔡理[2] 刘小强[2] 刘鹤鸣[1] 胡凡俊[1] 

机构地区：[1]空军第一航空学院,河南信阳464000 [2]空军工程大学理学院,西安710051

出　　处：《微纳电子技术》2016年第1期1-6,共6页Micronanoelectronic Technology

基　　金：国家自然科学基金资助项目(11405270;61172043)

摘　　要：随着特征尺寸的不断缩减,器件结电容减少、工作电压降低,使纳米CMOS电路对单粒子效应(SEE)更加敏感,同时伴随着明显的单粒子串扰、多结点翻转等现象,严重影响其工作可靠性。基于纳米CMOS电路在SEE下的可靠性,从基本电离损伤机理、SEE对电路的影响、可靠性评估及抗辐射加固设计等几个方面分析了最新的研究进展,最后指出了几个未来可能研究的焦点,包括:新材料和新结构器件的SEE研究、CMOS电路的抗辐射加固设计研究,特别是抗单粒子瞬态的加固研究及纳米CMOS电路的单粒子闩锁和烧毁机理、仿真及加固研究等。Due to lower junction capacitance and lower working voltage with feature size scaling down,the nano-meter CMOS circuits is more sensitive to the single event effect（SEE）,along with remarkable single event crosstalk and multiple node upset,which seriously influences the working reliability of nano-meter CMOS circuits.Based on the reliability for nano-meter CMOS circuits under the SEE,the recent research advances are analyzed from some respects,including the basic mechanism of ionization injury,the effect of the SEE on the circuits,the reliability evaluation and radiation-harden design for CMOS circuits.Finally,some future research focuses are presented,such as,the studies on the SEE of the devices with the advanced materials and new structures,the study on the radiation-harden design for CMOS circuits,especially the study on the hardened method for single event transient,the studies on the mechanism,simulation and hardened method of the single event latch-up and single event burnout for nano-meter CMOS circuits.

关 键 词：单粒子效应(SEE) 可靠性 纳电子器件 抗辐射加固 损伤机理 

分 类 号：TN432[电子电信—微电子学与固体电子学] TN406