温度对氧化镓纳米材料形貌及结构性质的影响  

Influence of the Temperature on the Morphology and Structural Properties of Gallium Oxide Nanomaterials

作　　者：王玉萍[1] 李玉国[1] 耿树吉 

机构地区：[1]山东师范大学物理与电子科学学院,济南250014

出　　处：《微纳电子技术》2016年第1期64-68,共5页Micronanoelectronic Technology

摘　　要：利用热蒸发法制备一维β-Ga_2O_3纳米材料。不同反应温度下,利用该方法对Ga单质和Au覆盖的Si(111)基片在通氮气的石英管中加热不同时间,制备了β-Ga_2O_3纳米材料,并通过扫描电子显微镜(SEM)、X射线衍射仪(XRD)、高分辨率透射电子显微镜(HRTEM)和能量色散谱(EDS)对样品进行了分析。结果显示,生成的纳米结构为β-Ga_2O_3单晶,温度对样品的形貌有显著的影响。1 200℃不同反应时间制备的β-Ga_2O_3纳米结构多为纳米线、纳米片和纳米颗粒,1 300℃不同反应时间制备的β-Ga_2O_3纳米结构多为柱状纳米结构。最后,简要讨论了纳米结构的生长机制为气-液-固(VLS)和气-固(VS)共同控制的生长机制。The one-dimensional β-Ga2O3nanomaterial was prepared by the thermal evaporation method.Based on this method,through heating Ga and Au-coated Si（111）substrate in a quartz tube with flowing nitrogen for different time at different temperatures,theβ-Ga2O3nanostructures were synthesized.The samples were analyzed using the scanning electron microscopy（SEM）,X-ray diffraction（XRD）,high-resolution transmission electron microscopy（HRTEM）and energy-dispersive spectrometry（EDS）.The results show that the prepared nanostructures are single-crystalline β-Ga2O3The annealing temperature has an evident influence on the morphology of the β-Ga2O3nanostructures.The most of the β-Ga2O3nanostructures prepared at1 200 ℃for different reaction time are nanowires,nanosheets and nanoparticles.The most of the β-Ga2O3nanostructures at 1 300℃for different reaction time are columnar nanostructure.Finally,the growth mechanism of the β-Ga2O3nanostructures was discussed,including the vaporliquid-solid（VLS）and vapor-solid（VS）mechanisms.

关 键 词：β-Ga2O3 纳米线 柱状纳米结构 热蒸发法 反应时间 

分 类 号：TB383[一般工业技术—材料科学与工程]