降低半绝缘GaAs单晶片亮点缺陷的热处理工艺研究  

On Thermal Treatment for Reducing Light Point Defect of GaAs Monocrystal Wafer

作　　者：杨艺[1] 周春锋[1] 兰天平[1] 

机构地区：[1]中国电子科技集团公司第四十六研究所,天津300220

出　　处：《天津科技》2016年第2期19-21,共3页Tianjin Science & Technology

摘　　要：GaAs单晶材料已成为一种重要的微电子和光电子基础材料,应用广泛。为了降低半绝缘砷化镓单晶片表面的亮点缺陷,对砷化镓晶片在不同温度和不同砷蒸汽压条件下进行了热处理,研究了热处理对砷化镓中砷的存在形式转换的影响及其机理。GaAs monocrystal material has already become one of the important fundamental materials in microelectronics and optics-electronics and has been widely applied in these fields. Thermal treatment was carried out under different tempera- tures and different arsenic vapor pressures for GaAs monocrystal wafers in order to reduce the light point defect. Meanwhile, the existence form of As in GaAs and its mechanism during the thermal treatment were studied in detail.

关 键 词：GaAs单晶片 热处理 亮点缺陷 EL_2 

分 类 号：G312[文化科学]