In和Te掺杂PbSe薄膜制备及其对薄膜光电性能的影响机制  

Fabrication of Indium and Tellurium Doped Lead Selenide Thin Films and Its Influence on Photoelectric Properties of Thin Films

作　　者：孙喜桂[1] 佟占勇 高克玮[1] 庞晓露[1] 杨会生[1] 

机构地区：[1]北京科技大学材料学院,北京100083 [2]中核核电运行管理有限公司,浙江海盐314300

出　　处：《红外》2016年第2期12-21,共10页Infrared

基　　金：国家自然科学基金项目(51271022);中央高校基本科研业务费专项资助项目(FRF-TP-14-008A2);北京市青年英才计划(YETP0353)

摘　　要：采用中频磁控溅射技术制备了PbSeIn和PbSeTe两种掺杂PbSe薄膜,并采用理论模拟与实际实验相结合的方法研究了In和Te两种元素的掺杂机制及其对薄膜性能的影响。结果表明,In原子主要通过置换Pb原子的形式进行掺杂,而Te原子则主要置换Se原子;与未掺杂PbSe薄膜相比,PbSeIn和PbSeTe两种薄膜的光电敏感性均有一定提高,其中In掺杂PbSe薄膜的平均电阻变化率最高。这是由于In元素在PbSe薄膜禁带内形成深杂质能级,提高非平衡载流子寿命所导致的。而PbSeTe薄膜的光电敏感性则与未掺杂PbSe薄膜相近。Two doped PbSe thin films PbSeln and PbSeTe are fabricated by mid-frequency magnetron sputtering.The doping mechanisms of two elements In and Te and their influences on film properties are studied by combining theoretical simulation with practical experiments.The results show that the doping of In atoms is achieved mainly by substituting Pb atoms and that of Te is achieved mainly by substituting Se atoms.Compared with the undoped PbSe films,the photoelectric properties of both PbSeln and PbSeTe films are improved certainly.The In doped PbSe film has the highest average resistance change rate.The photoelectric sensitivity of the PbSeTe film is close to that of the undoped PbSe film.

关 键 词：PbSe薄膜 掺杂 磁控溅射 能带结构 光电敏感性 

分 类 号：TB383.2[一般工业技术—材料科学与工程]